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Thermal Boundary Resistance and Heat Diffusion in AlGaN/GaN HFETs

Published online by Cambridge University Press:  01 February 2011

Konstantin A. Filippov  and
Alexander A. Balandin
Konstantin A. Filippov
Affiliation:
Nano-Device Laboratory Department of Electrical Engineering University of California - Riverside Riverside, California 92521
Alexander A. Balandin
Affiliation:
Nano-Device Laboratory Department of Electrical Engineering University of California - Riverside Riverside, California 92521
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Abstract

We theoretically investigate the thermal boundary resistance and heat diffusion in AlGaN/GaN heterostructure field-effect transistors. Our calculations based on the diffuse mismatch model show that the thermal boundary resistance at the interface between GaN and SiC can strongly influence the temperature rise in the device channel.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 764: Symposium C – New Applications for Wide-Bandgap Semiconductors , 2003 , C3.57
Copyright
Copyright © Materials Research Society 2003

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