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Thermal Annealing of Shallow Implanted Phosphorus in Si(100)

Published online by Cambridge University Press:  28 February 2011

Ning Yu ,
K. B. Ma ,
Z. H. Zhang ,
W. K. Chu ,
C. Kirschbaum  and
K. Varahramyan
Ning Yu
Affiliation:
Texas Center for Superconductivity, Department of Physics, University of Houston, Houston, TX 77004
K. B. Ma
Affiliation:
Texas Center for Superconductivity, Department of Physics, University of Houston, Houston, TX 77004
Z. H. Zhang
Affiliation:
Texas Center for Superconductivity, Department of Physics, University of Houston, Houston, TX 77004
W. K. Chu
Affiliation:
Texas Center for Superconductivity, Department of Physics, University of Houston, Houston, TX 77004
C. Kirschbaum
Affiliation:
Charles Evans and Associates, Redwood City, CA 94063
K. Varahramyan
Affiliation:
IBM Corporation, Essex Junction, VT 05452
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Abstract

The effect of channeling on the diffusion of ion implanted phosphorus in silicon has been investigated. Silicon samples, implanted with 25–100 keV P along the [100] channeling and the random equivalent directions, were subjected to thermal annealing over a temperature range of 600–1050 °C. Secondary Ion Mass Spectrometry (SIMS) and Spreading Resistance Probe (SRP) have been used to determine the atomic and carrier concentration depth profiles, respectively. The findings show that after annealing, the P profiles by implantation along the random equivalent direction can be kept shallower than the profiles obtained by implantation along the [100] channeling direction. Through proper annealing and electrical activation, only minimal diffusion in the tail region of the profiles occurred. For 50 keV P at 1×1015 at./cm2, changing the implantation from the [100] to the random equivalent direction leads to a reduction in the profile depth of about 50% (at 1×1017at./cm3). After 10 seconds of rapid thermal annealing (RTA) at 1050 °C, the profile depth remains more than 30% shallower than the channeled profile.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 235: Symposium A – Phase Formation and Modification by Beam-Solid Interactions , 1991 , 211
Copyright
Copyright © Materials Research Society 1992

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References

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