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Thermal and Stress Modeling for the Flash Lamp Crystallization of Amorphous Silicon Films

Published online by Cambridge University Press:  01 February 2011

Mark Smith
Affiliation:
mps38@cam.ac.uk, University of Cambridge, Department of Engineering, Trumpington Street, Cambridge, Cambridgeshire, CB2 1PZ, United Kingdom
Richard A. McMahon
Affiliation:
ram1@eng.cam.ac.uk, University of Cambridge, Department of Engineering, Trumpington Street, Cambridge, Cambridgeshire, CB2 1PZ, United Kingdom
Keith A. Seffen
Affiliation:
kas14@eng.cam.ac.uk, University of Cambridge, Department of Engineering, Trumpington Street, Cambridge, Cambridgeshire, CB2 1PZ, United Kingdom
Dieter Panknin
Affiliation:
D.Panknin@fz-rossendorf.de, Forschungszentrum Rossendorf, Institute of Ion Beam Physics and Materials Research, Dresden, Saxony, N/A, Germany
Matthias Voelskow
Affiliation:
m.voelskow@fz-rossendorf.de, Forschungszentrum Rossendorf, Institute of Ion Beam Physics and Materials Research, Dresden, Saxony, N/A, Germany
Wolgang Skorupa
Affiliation:
w.skorupa@fz-rossendorf.de, Forschungszentrum Rossendorf, Institute of Ion Beam Physics and Materials Research, Dresden, Saxony, N/A, Germany
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Abstract

Thin poly-crystalline silicon films are attractive for the fabrication of active matrix liquid crystal displays. We investigate the use of flash lamp annealing to crystallize amorphous silicon layers on glass substrates as a low cost manufacturing route. In this process amorphous silicon (a-Si) can be crystallized by solid phase crystallization (SPC) or in the super lateral growth (SLG) regime. We present a thermal model incorporating the phase transitions during annealing; providing a valuable tool for optimizing the process conditions. Another consideration is the evolution of stress resulting from the transient thermal loading of the substrate material. Results are presented for various substrate geometries and important scalability issues are addressed.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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References

1. Im, J.S. and Sposili, R.S., MRS Bulletin 21 (1996) p39. Google Scholar
2. Bae, S.J., Lee, H.S., Lee, L.Y., Park, J.Y., Han, C.W., 20th Int. Display Research conference 2000 Palm Beach, USA, 2000, p358.Google Scholar
3. Kuriyama, et al., Jpn. J. Apply. Phys. 30(1991) p3700.Google Scholar
4. Pecz, B., Dobos, L., Panknin, D., Skorupa, W., Lioutas, C. and Vouroutzis, N., Appl. Surf. Sci. 242 (2005) p185.Google Scholar
5. Lapp, J.C., Corning Technical Information.Google Scholar
6. Smith, M., McMahon, R., Voelskow, M., Panknin, D. and Skorupa, W., J. Cryst. Growth 285 (2005) p249260.Google Scholar
7. Heavens, O.: Optical Properties of Thin Solid Films (1955).Google Scholar
8. Properties of Amorphous Silicon and its Alloys (Ed Searle, T.M.): EMIS datareview.Google Scholar
9. Sun, B., Zhang, X., Grigoropoulos, C., Int. J. Heat Mass Transfer. Vol. 40(1997), No. 7 p15911600.Google Scholar
10.EMIS Datareview: Properties of Silicon (Series No.4).Google Scholar
11.Corning Display Technolgies, www.corning.com.Google Scholar
12. Smith, M., McMahon, R., Voelskow, M. and Skorupa, W., J. Appl Phys. 96(2004), p4843.Google Scholar
13. Spinella, C. and Priolo, F., J. Apply. Phys. 84(1998) p5383.Google Scholar
14.ABAQUS Inc. www.abaqus.com.Google Scholar