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Thermal and Photoinduced Decomposition Pathways of Arsine on GaAs(100)

Published online by Cambridge University Press:  25 February 2011

X.-Y. Zhu ,
M. Wolf ,
T. Huett  and
J. M. White
X.-Y. Zhu
Affiliation:
Department of Chemistry, University of Texas, Austin,TX 78712.
M. Wolf
Affiliation:
Department of Chemistry, University of Texas, Austin,TX 78712.
T. Huett
Affiliation:
Department of Chemistry, University of Texas, Austin,TX 78712.
J. M. White
Affiliation:
Department of Chemistry, University of Texas, Austin,TX 78712.
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Abstract

We have studied the thermal and photoinduced dissociation pathway of AsH3 on the Ga-rich GaAs(100) surface. Arsine adsorbs molecularly at 115 K and dissociates upon either heating to above 140 K or upon irradiation with 3.5 - 6.4 eV photons. The decomposition of arsine is accompanied by the formation of surface Ga-H species, which are thermally and photochemically more stable than surface AsHx. A comparison of the wavelength dependence for adsorbed and gas phase arsine reveals that the excitation mechanism of the AsH3 surface photochemistry is substrate mediated, which probably involves a charge transfer between surface states and the adsorbate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 236: Symposium B – Photons and Low Energy Particles in Surface Processing , 1991 , 133
Copyright
Copyright © Materials Research Society 1992

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