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Thermal and Electrical Properties of Czochralski Grown GeSi Single Crystals

Published online by Cambridge University Press:  21 March 2011

Ichiro Yonenaga ,
Takaya Akashi  and
Takashi Goto
Ichiro Yonenaga
Affiliation:
Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
Takaya Akashi
Affiliation:
Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
Takashi Goto
Affiliation:
Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
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Abstract

Single crystals of Ge1−xSix alloys in the composition range 0 < x < 1 non-doped and doped with boron, gallium, and phosphorus as an impurity were grown by the Czochralski method. The measurements of the thermal conductivity (κ), electrical conductivity (σ), and Seebeck coefficient (α) of the grown crystals were performed in the temperature range 300 – 1000 K. The thermal conductivityκ shows a minimum (κ ∼ 3.5 W/K.m) around the Si content x = 0.5 - 0.7, which can be explained by the phonon scattering due to a distortion of the crystal lattice. The Seebeck coefficientα was 300 - 400 μV/K at 600°C in the impurity-doped GeSi alloys. An ∣α∣ vs ln (σ) plot of highly impurity-doped GeSi alloys obeys a linear relation. The slope of the straight line is 1.2 k/e, indicating the coorporation of the charged impurity into the alloy scattering mechanism.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 691: Symposium G – Thermoelectric Materials 2001--Research and Applications , 2001 , G7.4
Copyright
Copyright © Materials Research Society 2002

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