Hostname: page-component-76fb5796d-25wd4 Total loading time: 0 Render date: 2024-04-26T08:05:58.662Z Has data issue: false hasContentIssue false
  • English
  • Français

Thermal Activation of Beryllium in GaN Grown by RF-Plasma Molecular Beam Epitaxy

Published online by Cambridge University Press:  01 February 2011

B. L. VanMil ,
Kyoungnae Lee ,
Lijun Wang ,
N. C. Giles  and
T. H. Myers
B. L. VanMil
Affiliation:
Department of Physics, West Virginia University, Morgantown, WV 26506
Kyoungnae Lee
Affiliation:
Department of Physics, West Virginia University, Morgantown, WV 26506
Lijun Wang
Affiliation:
Department of Physics, West Virginia University, Morgantown, WV 26506
N. C. Giles
Affiliation:
Department of Physics, West Virginia University, Morgantown, WV 26506
T. H. Myers
Affiliation:
Department of Physics, West Virginia University, Morgantown, WV 26506
Get access

Abstract

Differences in the optical activity of Be in GaN epilayers grown on different surface polarities by rf-plasma molecular beam epitaxy are investigated. Nitrogen-polar GaN doped with Be exhibits a significantly higher intensity of donor-acceptor pair (DAP) photoluminescence (PL) than similarly doped Ga-polar GaN, indicating the Be is incorporating at microscopically different sites, or possibly is forming different compensating complexes. Highly Be-doped Ga-polar GaN apparently forms isolated polarity-inverted regions which then incorporate Be via the N-polar mechanism resulting in the DAP PL. High temperature annealing of the Ga-polar layers both under nitrogen/hydrogen mixtures and under pure nitrogen atmospheres activates the DAP PL.

Type
articles
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y10.59
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Sanchez-Garcia, M.A., Calleja, E., Sanchez, F.J., Calle, F., Monroy, E., Basak, D., Munoz, E., Villar, C., Sanz-Hervas, A., Aguilar, M., Serizan, J.J. and Blanco, J. M., J. Elec. Mat. 27, 276 (1998)Google Scholar
2. Dewsnip, D. J., Andrianov, A. V., Harrison, I., Orton, J. W., Lacklison, D. E., Ren, G. B., Hooper, S.E., Cheng, T. S. and Foxon, C. T., Semicond. Sci. Technol. 13, 500 (1998)Google Scholar
3. Ploog, K.H. and Brandt, O., J. Vac. Sci. Technol. A 16, 1609 (1998)Google Scholar
4. Sun, Yuejun, Seow Tan, Leng, Chua, Soo Jin and Prakash, Savarimuthu, Mat. Res. Soc. Symp. 595, W3.82.1 (2000)Google Scholar
5. Nakano, Yoshitaka and Jimbo, Takashi, Appl. Phys. Lett. 81, 3990 (2002)Google Scholar
6. Myers, T.H., Hirsch, L.S., Romano, L.T., and Richards-Babb, M.R., J. Vac. Sci. Technol. B16, 2261 (1998)Google Scholar
7. Smith, A.R., Ramachandran, V., Feenstra, R.M., Greve, D.W., Ptak, A., Myers, T. H., Sarney, W., Salamanca-Riba, L., Shin, M. and Skowronski, M., MRS Internet J. Nitride Semicond. Res. 3, 12 (1998)Google Scholar
8. Tarsa, E.J., Heying, B., Wu, X.H., Fini, P., DenBaars, S.P., and Speck, J.S., J. Appl. Phys. 82, 5472 (1997)Google Scholar
9. Ptak, A.J., Wang, Lijun, Giles, N.C., Myers, T.H., Romano, L.T., Tian, C., Hockett, R.A., Mitha, S. and Van Lierde, P., Appl. Phys. Lett. 79, 4524 (2001)Google Scholar
10. Stocker, D.A., Schubert, E.F. and Redwing, J.M., Appl. Phys. Lett. 73, 2654 (1998)Google Scholar
11. Sanchez, F.J., Calle, F., Sanchez-Garcia, M.A., Calleja, E., Munoz, E., Molloy, C.H., Somerford, D.J., Serrano, J.J. and Blanco, J.M., Semicond. Sci. Technol. 13, 1130 (1998)Google Scholar
12. Ptak, A.J., Myers, T.H., Wang, Lijun, Giles, N.C., Moldovan, M., Da Cunha, C.R., Hornak, L.A., Tian, C., Hockett, R.A., Mitha, S. and Van Lierde, P., Mat. Res. Soc. Symp. 639, G3.3 (2001)Google Scholar
13. Myers, T.H., Ptak, A.J., Lijun, Wang, and Giles, N.C., Inst. of Pure and Appl. Phys. Conference Series 1, 451 (2000)Google Scholar
14. Reboredo, F.A. and Pantelides, S.T., Phys. Rev. Lett. 82, 1887 (1999)Google Scholar
15. Calle, F., Sanchez, F.J., Tijero, J.M.G., Sanchez-Garcia, M.A., Calleja, E. and Beresford, R., Semicond. Sci. Technol. 12, 1396 (1997)Google Scholar
16. Calleja, E., Sanchez-Garcia, M.A., Calle, F., Naranjo, F.B., Munoz, E., Jahn, U., Ploog, K., Sanchez, J., Calleja, J. M., Saarinen, K. and Hautojarvi, P., Mat. Sci. and Eng. B 82, 2 (2001)Google Scholar