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Theoretical Investigation of Thermal Conductivity in Wurtzite GaN

Published online by Cambridge University Press:  01 February 2011

Dmitri Kotchetkov ,
Jie Zou  and
Alexander A. Balandin
Dmitri Kotchetkov
Affiliation:
Department of Electrical Engineering University of California at Riverside Riverside, California 92521 U.S.A.
Jie Zou
Affiliation:
Department of Electrical Engineering University of California at Riverside Riverside, California 92521 U.S.A.
Alexander A. Balandin*
Affiliation:
Department of Electrical Engineering University of California at Riverside Riverside, California 92521 U.S.A.
*
1Corresponding author; electronic address: alexb@ee.ucr.edu
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Abstract

We apply Klemens' second-order perturbation theory to investigate thermal conductivity in wurtzite GaN films. Specifically, the effect of edge, screw, and mixed types of dislocations and their orientation with respect to the temperature gradient on the thermal conductivity values is analyzed. Using typical impurity profiles for GaN films, we study the relative contribution of different impurities into thermal resistance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 731: Symposium W – Modeling and Numerical Simulation of Materials Behavior and Evolution , 2002 , W5.11
Copyright
Copyright © Materials Research Society 2002

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