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Texture Analysis of Si(100) and Si(111) Surfaces Using Autocovariance Of Afm Images

Published online by Cambridge University Press:  21 February 2011

Shintaro Aoyama  and
Tadahiro Ohmi
Shintaro Aoyama
Affiliation:
Department of Electronics, Faculty of Engineering, Tohoku University at Aza Aoba, Aramaki, Aoba-ku, Sendai, Japan
Tadahiro Ohmi
Affiliation:
Department of Electronics, Faculty of Engineering, Tohoku University at Aza Aoba, Aramaki, Aoba-ku, Sendai, Japan
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Abstract

In this report we studied the surface microtexture of Si substrate observed by AFM. Applying sacrificial oxidation cycle on Si(100) and Si(111) with 1000°C 4hr wet oxidation, the change of surface texture was studied by autocovariance analysis of AFM image. This analysis enable to evaluate lateral size of roughness structure. In this experiment calibration of the axes of AFM images were performed by using patterned step. Different type of surface texture and its changes after the thermal process were confirmed on Si(100) and Si(111). Surface microroughness at Si(111) was increased by the processes along with the increase of the lateral correlation length. On the other hand Si(100) surface was planalized and did not changes the lateral structure size. Further more we will discuss the global periodicity of roughness inherent in crystal orientation of surface revealed by autocovariance images.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 315: Symposium Y – Surface Chemical Cleaning and Passivation for Semiconductor Processing , 1993 , 417
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

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