Hostname: page-component-848d4c4894-4rdrl Total loading time: 0 Render date: 2024-06-26T20:08:19.876Z Has data issue: false hasContentIssue false
  • English
  • Français

Temperature Uniformity Optimization Using Three-Zone Lamp and Dynamic Control in Rapid Thermal Multiprocessor

Published online by Cambridge University Press:  28 February 2011

Pushkar P. Apte ,
Samuel Wood ,
Len Booth ,
Krishna C. Saraswat  and
Mehrdad M. Moslehi
Pushkar P. Apte
Affiliation:
Center for Integrated Systems, Stanford University, Stanford, CA 94305
Samuel Wood
Affiliation:
Center for Integrated Systems, Stanford University, Stanford, CA 94305
Len Booth
Affiliation:
Center for Integrated Systems, Stanford University, Stanford, CA 94305
Krishna C. Saraswat
Affiliation:
Center for Integrated Systems, Stanford University, Stanford, CA 94305
Mehrdad M. Moslehi
Affiliation:
Semiconductor Process and Design Center, Texas Instruments, Dallas, TX 75265
Get access

Abstract

Rapid thermal processing (RTP) can play an important role in in situ single-wafer thermal multiprocessing, since it allows for a rapid wafer throughput rate. Conventional dedicated RTP equipment, where temperature uniformity is achieved by optimized reflector and chamber geometries for a specific process, typically cannot provide uniformity for different processes, or for a range of processing conditions. In this work we present a new flexible lamp system, in which tungsten-halogen lamps are configured in three concentric rings that are independently and dynamically controlled. The resultant circularly symmetric flux, which can be varied and controlled both temporally and spatially, offers significantly improved temperature uniformity. This is demonstrated using thermocouples as well as actual processes such as implant annealing, thermal oxidation and chemical vapor deposition of silicon. Through added flexibility and more precise control, this approach offers a powerful tool for multiprocessing and rapid process prototyping.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 224: Symposium F – Rapid Thermal and Integrated Processing I , 1991 , 209
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Saraswat, K. C., Moslehi, M. M., Gorssman, D. D., Wright, P., and Booth, L.. in Rapid Thermal Annealing/CVD and Integrated Processing, Mat. Res. Soc. Proc., 146, 3, (1989).CrossRefGoogle Scholar
[2] Apte, P. P., Venkatraman, R., Saraswat, K. C., Moslehi, M. M., and Yeakley, R.. in Rapid Thermal and Integrated Processing, Mat. Res. Soc. Proc., 1991.Google Scholar
[3] Bentini, G., Correra, L., and Donalato, C.. J. Appl. Physics, 56(10), 2922, (1984).Google Scholar
[4] Lord, H. A.. IEEE Trans. on Semiconductor Manufacturing, 2, 105, (1988).Google Scholar
[5] Norman, S. A., Schaper, C. D., and Boyd, S. P.. in Rapid Thermal and Integrated Processing, Mat. Res. Soc. Proc., 1991.Google Scholar