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Temperature Dependent Current-Voltage Characteristics in Thin SiO2 Films

Published online by Cambridge University Press:  25 February 2011

Jin Zhao  and
N. M. Ravindra
Jin Zhao
Affiliation:
Microelectronics Research Center, New Jersey Institute of Technology, Newark, NJ 07102
N. M. Ravindra
Affiliation:
Microelectronics Research Center, New Jersey Institute of Technology, Newark, NJ 07102
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Abstract

An analysis of the Fowler-Nordheim tunneling (FNT) theory and its application to temperature dependent current-voltage characteristics, of very thin films of SiO2 on silicon, is presented. The final results are believed to provide the most complete examination of FN emission theory and predict the breakdown electric field in thin SiO2 films. The role of the roughness, at the Si-SiO2 interface, in determining the FNT current in these structures is also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 159: Symposium C – Atomic Scale Structure of Interfaces , 1989 , 217
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

[1]. Lenzinger, M. & Snow, E. H., J. Appl. Phys., 40, 278 (1969)Google Scholar
[2]. Ravindra, N. M., et al. Mal. Res. Soc. Symp. Proc., 105, 169 (1988)Google Scholar
[3]. Weinberg, Z. A., J. Appl. Phys., 52, 5052 (1982).Google Scholar
[4]. Krieger, G. & Swanson, R. M., J. Appl. Phys., 52, 5710 (1981)Google Scholar
[5]. Obsburn, C. M. & Weitzman, E. J., J. Electrochemical Soc., 119, 603 (1972)Google Scholar
[6]. Ravindra, N. M., et al, Phys. Stat. Sol., 70, 623 (1982)Google Scholar
[7]. Sharma, A. C., et al. Phys. Stat. Sol., 120, 715 (1983)Google Scholar
[8]. Ravindra, N. M., et al, J. Mat. Res., 2, 216 (1987)Google Scholar
[9]. Carim, A. H. & Sinclair, R., Mat. Lett., 5, 94 (1987)Google Scholar
[10]. Weinberg, Z. A., Solid-State Elec., 20, 11 (1977)Google Scholar
[11]. Williams, R., J. Appl. Phys., 40, 278 (1969)Google Scholar
[12]. Osburn, C. M., MCNC Memorandum, March (1986)Google Scholar