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The Temperature Dependent Breakdown Voltage For 4H- and 6H-SiC Diodes

Published online by Cambridge University Press:  15 March 2011

Y. S. Lee ,
M. K. Han  and
Y. I. Choi
Y. S. Lee
Affiliation:
School of Electrical Eng., Seoul Nat'l Univ., Shinlim-Dong Kwanak-Ku, Seoul 151-742, KoreaTel : +82-2-880-7254, Fax : +82-2-873-9953, E-mail : lys9229@snu.ac.kr
M. K. Han
Affiliation:
School of Electrical Eng., Seoul Nat'l Univ., Shinlim-Dong Kwanak-Ku, Seoul 151-742, KoreaTel : +82-2-880-7254, Fax : +82-2-873-9953, E-mail : lys9229@snu.ac.kr
Y. I. Choi
Affiliation:
Dep. of Molecular Science and Technology, Ajou Univ., Wonchun-Dong, Suwon 442-749, Korea, E-mail : yearnik@madang.ajou.ac.kr
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Abstract

The breakdown voltages of 6H- and 4H-SiC rectifiers as function of temperature were modeled analytically in both non-reachthrough diode and reachthrough diode. The breakdown voltage was derived by the ionization integral employing accurate hole impact ionization coefficient. The breakdown voltage of SiC rectifiers was increased with increasing temperature and the positive temperature coefficient of breakdown voltage indicates that SiC rectifiers are suitable for high temperature applications. The breakdown voltages of both 6H- and 4H-SiC diodes were increased by M(T)-1/4 in NRDs and M(T)-1/8 in RDs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 622: Symposium T – Wide-Bandgap Electronic Devices , 2000 , T6.4.1
Copyright
Copyright © Materials Research Society 2000

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References

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