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Temperature Dependence of the Optical Absorption Edge in Indium Phosphide

Published online by Cambridge University Press:  10 February 2011

M. Beaudoin ,
S.R. Johnson ,
A.J.G. Devries ,
A. Mohades-Kassai  and
T. Tiedje
M. Beaudoin
Affiliation:
Advanced Materials and Process Engineering Laboratory and Department of Physics and Astronomy, University of British Columbia, 2355 East Mall, Vancouver, BC, V6T 1Z4
S.R. Johnson
Affiliation:
Advanced Materials and Process Engineering Laboratory and Department of Physics and Astronomy, University of British Columbia, 2355 East Mall, Vancouver, BC, V6T 1Z4
A.J.G. Devries
Affiliation:
Advanced Materials and Process Engineering Laboratory and Department of Physics and Astronomy, University of British Columbia, 2355 East Mall, Vancouver, BC, V6T 1Z4
A. Mohades-Kassai
Affiliation:
Advanced Materials and Process Engineering Laboratory and Department of Physics and Astronomy, University of British Columbia, 2355 East Mall, Vancouver, BC, V6T 1Z4
T. Tiedje
Affiliation:
Also Department of Electrical Engineering
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Abstract

Optical bandgap thermometry is a new method for measuring the temperature of semiconductor substrates. In this method, the temperature of the substrate is inferred from the wavelength of the onset of transparency of the substrate which is a measure of its bandgap. Common configurations of this technique are diffuse reflectance and transmittance. In order to calibrate these spectra to substrate temperature and to better understand the temperature dependence of the absorption edge, the transmittance spectra of semi-insulating InP:Fe and n-type InP:S substrates have been measured as a function of temperature in a tube. The width of the absorption edge (Urbach parameter) is found to increase linearly with temperature from 8.7 meV at room temperature to 15.7 meV at 595°C for semi-insulating InP:Fe while it remains independent of temperature at a value of about 21.5 meV for heavily doped (6.5×1018 cm−3) InP:S. For InP:Fe, the temperature dependent part of the width is smaller than predicted by the standard theory where the width of the edge is proportional to the phonon population. The values of the Urbach parameter for InP:Fe are higher than those of semi-insulating GaAs which is attributed to the higher ionicity of InP.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 421: Symposium D – Compound Semiconductor Electronics and Photonics , 1996 , 367
Copyright
Copyright © Materials Research Society 1996

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