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Temperature Dependence of the Electrical Resistivity in Nanocrystalline Gold Films Made by Advanced GaS Deposition

Published online by Cambridge University Press:  21 February 2011

J. Ederth ,
L. B. Kiss ,
G. A. Niklasson ,
C. G. Granqvist  and
E. Olsson
J. Ederth
Affiliation:
Department of Materials Science, Uppsala University, BOX 534, S-751 21 Uppsala, weden
L. B. Kiss
Affiliation:
Department of Materials Science, Uppsala University, BOX 534, S-751 21 Uppsala, weden
G. A. Niklasson
Affiliation:
Department of Materials Science, Uppsala University, BOX 534, S-751 21 Uppsala, weden
C. G. Granqvist
Affiliation:
Department of Materials Science, Uppsala University, BOX 534, S-751 21 Uppsala, weden
E. Olsson
Affiliation:
Department of Materials Science, Uppsala University, BOX 534, S-751 21 Uppsala, weden
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Abstract

Nanocrystalline thin Au films with grain size 10 - 76 nm have been analyzed regarding the temperature dependence of the electrical resistivity. A sudden change in the power function, ρ α Tn, was found at ∼10 K, where n = 1.7 in the range 5 - 10 K and n = 3.3 in the range 10 - 15 K. This effect disappears after annealing at 773 K for 0.5 h in air at atmospheric pressure. After the annealing the grain size was ∼ 100 nm. This is an indication of interference between electron-phonon scattering and electron-grain boundary scattering in nanocrystalline materials at low temperatures.

The temperature coefficient of resistivity, TCR, increased with increasing grain size at any temperature and the position of the maximum TCR was shifted towards lower temperatures with increasing grain size.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 581: Symposium F – Nanophase & Nanocomposite Materials II , 1999 , 541
Copyright
Copyright © Materials Research Society 2000

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References

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