The stress and temperature dependence of the dislocation velocity v(σ, T) has been studied experimentally in Ni3AI single crystals. The mobility of individual dislocations was measured by the stress pulse-etching technique at temperatures between 77 and 873 K at the resolved shear stresses between 25 and 150 MPa over a range of dislocation velocities from 3×l0−7 to 3×10−5 m/s. Fresh dislocations were introduced and revealed by a selective etchant on {001} surfaces of electropolished specimens annealed at 1473 K for 120 hours in argon. The specimens were deformed in three point bending around <110> bending axis at a constant temperature. The dislocation arrays moved in two acting <110> {111} primary glide systems. The motion occurred over a range of applied stresses close to the macroscopical yield stresses y The dislocation velocity decreased as temperature increased, in perfect analogy to the experimental data on y obtained before 1 on the same Ni3Al.. No detectable violation of the Schmid law was observed. The stress dependence of the dislocation velocity was rather steep resulting in a relatively large activation area of A=100-200b2. Such an activation area is greater than that one could expect in a kink-mode crystal with predominant Peierls mechanism for dislocation motion, although it is considerably less than A measured in other materials controlled by local obstacles.