Hostname: page-component-848d4c4894-mwx4w Total loading time: 0 Render date: 2024-06-24T15:02:11.672Z Has data issue: false hasContentIssue false
  • English
  • Français

Tem Study of Metal Impurity Precipitates in the Surface Regions of Silicon Wafers

Published online by Cambridge University Press:  26 February 2011

M. Seibt  and
K. Graff
M. Seibt
Affiliation:
IV. Physikalisches Institut der Universität Göttingen, D-3400 Göttingen, Bunsenstr. 11-15, Federal Republic of Germany
K. Graff
Affiliation:
TELEFUNKEN electronic, Theresienstr.2, D-7100 Heilbronn, Federal Republic of Germany
Get access

Abstract

The precipitation behaviour of the transition metals Co, Ni, Cu and Pd has been studied by means of conventional and high - resolution electron microscopy. Special experimental conditions for specimen preparation were chosen, which lead to the formation of haze. These conditions were the same for all metals. Therefore, a direct comparison of the respective precipitation phenomena was possible. Co and Ni were found to precipitate as Si - rich silicide particles exhibiting various morphologies attributed to different stages of particle growth and ripening. It is shown that the generation of Si- self - interstitials (and vacancies) plays a minor role in the preci-pitate formation. On the other hand Cu and Pd precipitate as metal - rich silicide particles. They form star - like colonies consisting of small particles and extended extrinsic edge - type dislocation loops. The precipitation behaviour of these two met-als is governed by the generation of Si - self - interstitials due to the large misfit of the metal - rich silicide particles.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 215
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. e.g. Graff, K., in: Aggregation Phenomena of Point Defects in Silicon, ed. Sirtl, E., Goorissen, J., Electrochem.Soc., Pennington 1983, p.121Google Scholar
2. e.g. Cullis, A.G., and Katz, L.E., Phil.Mag. 30,1419 (1974)Google Scholar
3. e.g. Augustus, P.D., in: Proc. Conf Micr. Semicond. Mat. III, Inst. Phys. Conf. Ser.No.67,229 (1983)Google Scholar
4. e.g. Solberg, J.K., and Nes, E., J.Mat.Sci. 13 2233 (1978)Google Scholar
5.Seibt, M., and Graff, K., J.Appl.Phys., submitted for publicationGoogle Scholar
6.Pearson, W.B., A Handbook of Lattice Spacings and Structures of Metals and Alloys, Vol.2, Pergamon, London 1967Google Scholar
7.Solberg, J.K., Acta Cryst.A 34, 684 (1978)Google Scholar
8.Seibt, M., unpublishedGoogle Scholar
9.Seibt, M., and Schröter, W., Phil.Mag.A, submitted for publicationGoogle Scholar
10.Nes, E., and Washburn, J.J.Appl.Phys. 44,3682 (1973)Google Scholar
11.Graff, K., Hefner, H.-A., and Pieper, H. in: Impurity Diffusion and Gettering in Silicon, edited by Fair, R.B., Pearce, C.W., and Washburn, J. (Mater. Res. Soc. Proc. 36, Pittsburgh, PA 1985), p. 19Google Scholar
12.Nes, E., Acta.metall.22,81 (1974)Google Scholar
13.Stacy, W.T., Allison, D.F., and Wu, T.-C., in: Semiconductor Silicon 1981), ed. Huff, H.R., Kriegler, R.J., and Takeishi, Y. (The Electrochem. Soc., Pennington 1981), p.354Google Scholar