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Tem Structural Studies on Zn+ Implanted and As+ /Zn+ Dually Implanted GaAs

Published online by Cambridge University Press:  25 February 2011

E. Morita ,
J. Kasahara ,
M. Arai  and
S. Kawado
E. Morita
Affiliation:
Sony Corporation Research Center, 174, Fujitsuka-cho, Hodogaya-ku, Yokohama, 240, Japan
J. Kasahara
Affiliation:
Sony Corporation Research Center, 174, Fujitsuka-cho, Hodogaya-ku, Yokohama, 240, Japan
M. Arai
Affiliation:
Sony Corporation Research Center, 174, Fujitsuka-cho, Hodogaya-ku, Yokohama, 240, Japan
S. Kawado
Affiliation:
Sony Corporation Research Center, 174, Fujitsuka-cho, Hodogaya-ku, Yokohama, 240, Japan
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Abstract

Microdefects in Cr-doped SI LEC (001) GaAs wafers which were implanted with Zn+ or As /Zn and capless-annealed in an As ambient have been studied by means of transmission electron microscopy. Most of the microdefects in Zn +- implanted GaAs specimens were identified as precipitates and stacking fault tetrahedra (SFTs). Every SFT was accompanied by a precipitate at the apex. Most of the precipitates were distributed from Rp to Rp + 2∆Rp. Two types (α and β) of SFTs were differentiated by the arrangement of atoms in the core of the stair-rod partial dislocations bounding the periphery of the SFTs in a polar Frystal. β-SFTs were, however, predominantly formed in Zn+ implanted GaAs specimens. Dual implantation of As+ and Zn+ suppressed the formation of SFTs, but not that of precipitates. The formation of SFTs was found to be influenced by the deviation in stoichiometry.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 45: Symposium A – Ion Beam Processes in Advanced Electronic Materials and Device Technology , 1985 , 279
Copyright
Copyright © Materials Research Society 1985

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References

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