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A Tem Investigation of the Initial Stages of InSb Growth on GaAs (001) by Molecular Beam Epitaxy

Published online by Cambridge University Press:  28 February 2011

X. Zhang ,
A.E. Staton-Bevan  and
D.W. Pashley
X. Zhang
Affiliation:
Department of Materials, Imperial College of Science, Technology and Medicine, London SW7 2AZ, U.K.
A.E. Staton-Bevan
Affiliation:
Department of Materials, Imperial College of Science, Technology and Medicine, London SW7 2AZ, U.K.
D.W. Pashley
Affiliation:
Department of Materials, Imperial College of Science, Technology and Medicine, London SW7 2AZ, U.K.
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Abstract

This investigation focuses attention on the very early stages of MBE growth of InSb on GaAs (001). Both conventional and high resolution TEM have been used for a study of InSb layers varying between 5 and 300 monolayers in average thickness. The observations provide conclusive evidence of 3D nucleation and island growth. Complete lattice relaxation is brought about by a network of 1/2 <110> Lomer dislocations at the InSb/GaAs interface and there is strong evidence for the presence of an additional sphalerite interfacial phase. Threading dislocations and planar defects in the InSb epilayer are mainly introduced during island coalescence.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 383
Copyright
Copyright © Materials Research Society 1990

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