Chemical‐Mechanical Polishing (CMP) is one of the fastest growing market segments in the semiconductor equipment industry. One of the critical consumable in CMP is a specialized solution, or slurry, which contains both free abrasives and chemicals acting together to planarize a wafer. These chemically active slurries account for approximately one fifth of the total cost of polishing a wafer. Because of the cost and potential toxicity, there are both financial and environmental pressures to reduce the amount of slurry consumed during the CMP process. To accomplish this in a systematic manner we have developed a technique for quantifying slurry flow patterns during CMP which involves using fluorescent dyes to measure slurry mixing, temperature gradients and slurry aging during the polishing. An aqueous fluorescent solution with matching viscosity is used to model the slurry, a glass window models the wafer and a commercially available polisher provides the polishing pad/table rotating work surface. This talk will focus on the diagnostic technique used to measure the slurry behavior as well as some semi‐quantitative results on both the amount and uniformity of slurry entrained beneath the wafer as a function of pad topography, injection location and pad rotation rates.