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Systematics of Silicide Formation by High Dose Miplantation of Transition Metals into Si

Published online by Cambridge University Press:  28 February 2011

F. Namavar ,
F. H. Sanchez ,
J. I. Budnick ,
A. H. Fasihuddin  and
H. C. Hayden
F. Namavar
Affiliation:
Department of Physics, The University of Connecticut, Storrs, CT 06268, U.S.A.
F. H. Sanchez
Affiliation:
Department of Physics, The University of Connecticut, Storrs, CT 06268, U.S.A.
J. I. Budnick
Affiliation:
Department of Physics, The University of Connecticut, Storrs, CT 06268, U.S.A.
A. H. Fasihuddin
Affiliation:
Department of Physics, The University of Connecticut, Storrs, CT 06268, U.S.A.
H. C. Hayden
Affiliation:
Department of Physics, The University of Connecticut, Storrs, CT 06268, U.S.A.
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Abstract

We have systematically studied the formation of transition-metal thin films by high dose (up to 1018 ions/cm2) implantation of Ti, V, Cr, Mn, Fe, Co, Ni and Nb at room temperature and 350°C into Si <100>.

For implantation at 350°C, our results, as obtained by Rutherford backscattering, X-ray diffractometry and Read Camera measurements, indicate that one can categorize these metals into two groups:

  1. 1. a chromium group which includes V, Cr, Nb, Ti and Mn. Metals V, Cr and Nb form compounds (VSi2, CrSi2. NbSi2) with a hexagonal structure of the CrSi2 type whereas Ti and Mn both form compounds (Ti5Si3, Mn5Si3) with a hexagonal structure of the Mn5Si2 type.

  2. 2. an iron group which includes Fe, Co and Ni. These metals form compounds (FeSi, CoSi, NiSi) with a cubic structure of the FeSi type.

In this paper the experimental results for Cr and Fe implantation at room temperature and 350°C will be discussed.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 74: Symposium A – Beam-Solid Interactions and Transient Processes , 1986 , 487
Copyright
Copyright © Materials Research Society 1987

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