Hostname: page-component-77c89778f8-cnmwb Total loading time: 0 Render date: 2024-07-18T11:39:57.076Z Has data issue: false hasContentIssue false
  • English
  • Français

Synthesis, Structure and Luminescence of High Brightness Gallium Nitride Powder

Published online by Cambridge University Press:  01 February 2011

R. Garcia ,
A. Thomas ,
A. Bell ,
M. Stevens  and
F. A. Ponce
R. Garcia
Affiliation:
Department of Physics and Astronomy, Arizona State University, Tempe, AZ 85281–1504
A. Thomas
Affiliation:
Technology Development, Roger Corporation, Durel Division, Chandler, AZ 85224–6155
A. Bell
Affiliation:
Department of Physics and Astronomy, Arizona State University, Tempe, AZ 85281–1504
M. Stevens
Affiliation:
Department of Physics and Astronomy, Arizona State University, Tempe, AZ 85281–1504
F. A. Ponce
Affiliation:
Department of Physics and Astronomy, Arizona State University, Tempe, AZ 85281–1504
Get access

Abstract

Highly luminescent GaN powders have been synthesized by reacting high purity gallium metal with ultra-high purity ammonia in a horizontal quartz reactor at 1100 °C. The powders produced in this reactor consist of light grey micro-crystals with wurtzite structure. Elemental analysis indicates that the powders obtained by this method have a high nitrogen concentration (more than stoichiometric GaN, 16.73 weight %). Powder X-ray diffraction demonstrates that the material has a high purity and single crystalline structure. Electron microscopy shows that the powders consist of at least two kinds of particles, small sized platelets and large sized needles. The resulting GaN powders are thousands of times more cathode- and photo-luminescent than other GaN powders including commercially available material. Their luminescence intensities are comparable to that of GaN thin films grown by hydride vapor phase epitaxy and metal organic chemical vapor deposition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y10.75
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Ponce, F. A. and Bour, D. P., “Nitride-based semiconductors for blue and green light-emitting devices”, Nature, 386, 351–359 (1997).Google Scholar
2 Johnson, W. C., Parsons, J. B., and Crew, M. C., “Nitrogen Compounds of Gallium”, J. Phys. Chem., 36, 2651–54 (1932).Google Scholar
3 Pichugin, I. G. and Yaskov, D. A., “Preparation of Gallium Nitride”, Inorg. Mater., 6, 1732–34 (1972).Google Scholar
4 Balkas, C. M. and Davis, R. E., “Synthesis Routes and Characterization of High-Purity, Single-Phase Gallium Nitride Powders”, J. Am. Ceram. Soc., 79 (9), 2309–12 (1996).Google Scholar
5 Li, H. D., Yang, H. B., Yu, S., Zou, G. T., Li, Y. D., Liu, S. Y., and Yang, S. R., “Synthesis of ultrafine gallium nitride powder by the direct current arc plasma method”, Appl. Phys. Lett., 69 (9), 1285–87 (1996)Google Scholar
6 Barry, S. T., Ruoff, S. A., and Ruoff, A. L., “Gallium Nitride Synthesis Using Lithium Metal as a Nitrogen Fixant”, Chem. Mater., 10, 2571–74 (1998).Google Scholar
7 Shibata, M., Furuya, T., Sakaguchi, H., and Kuma, S., “Synthesis of gallium nitride by ammonia injection into gallium melt”, J. Crystal. Growth, 196, 47–52 (1999).Google Scholar
8 Dwilinski, R., Doradzinski, R., Garczynski, J., Sierzputowski, L., Baranowski, J. M., and Kaminska, M., “AMMONO method of GaN and AlN production”, Diamond and Related Materials, 7, 1348–50 (1998).Google Scholar
9 Kumar, M. S., Ramasamy, P., and Kumar, J., “Structural studies on synthesized gallium nitride”, J. Crystal Growth, 211, 184–88 (2000).Google Scholar
10 Kamler, G., Zachara, J., Podsiadlo, S., Adamowicz, L., and Gebicki, W., “Bulk GaN single-crystals growth”, J. Crystal growth, 212, 39–48 (2000).Google Scholar
11 Barin, I. and Platzki, G., Thermochemical Data of Pure Substances (VCH), 739–1088, (1995).Google Scholar
12 García, R., Hirata, G. A., Farías, M. H. and McKittrick, J., “A novel method for the synthesis of sub-microcrystalline wurtzite-type In x Ga 1−x N powders”, Materials Science and Engineering (B): Solid State Materials for Advanced Technology, B90, 7–12 (2002).Google Scholar
13 Edgar, J. H., Properties of Group III Nitrides, INSPEC-IEE, London, UK, 20–40 (1994).Google Scholar
14 Cullity, B. D., Elements of X-Ray Diffraction, Addison-Wesley, USA, 324 (1978).Google Scholar
15 Monemar, B. “Bound excitons in GaN” J. Phys.: Condens. Matter 13 7011 (2001).Google Scholar
16 Chung, B. -C. and Gershenzon, M., J. Appl. Phys. 72, 651 (1992).Google Scholar
17 Albrecht, M. et al., Mater. Res. Soc. Symp. Proc. 468, 293 (1997).Google Scholar