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Synthesis of the Carrier Doped Infinite-Layer Films by rf Thermal Plasma Evaporation

Published online by Cambridge University Press:  15 February 2011

A. Kume ,
H. Yakabe ,
Y. Shiohara  and
N. Koshizuka
A. Kume
Affiliation:
Superconductivity Research Laboratory, ISTEC 10-13,Shinonome 1-chome Koto-ku, Tokyo, 135 JAPAN
H. Yakabe
Affiliation:
Superconductivity Research Laboratory, ISTEC 10-13,Shinonome 1-chome Koto-ku, Tokyo, 135 JAPAN
Y. Shiohara
Affiliation:
Superconductivity Research Laboratory, ISTEC 10-13,Shinonome 1-chome Koto-ku, Tokyo, 135 JAPAN
N. Koshizuka
Affiliation:
Superconductivity Research Laboratory, ISTEC 10-13,Shinonome 1-chome Koto-ku, Tokyo, 135 JAPAN
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Abstract

We tried to deposit (Sr1−xCax)0.9CuO2-δ films, so-called “the infinite-layer” structure, of (100) SrTiO3 substrates by using radio-frequency thermal plasma evaporation. The crysta structure of these films was confirmed by X-ray diffraction to consist of the (00l) oriented infinite-layer structure. However, the temperature dependence of resistivity showed no superconductivity in spite of varying ratios of Sr/Ca. A description is given of attempts to induce superconductivity in the infinite-layer films by the introduction of holes, namely by O2 plasma annealing and Na-doping.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 341: Symposium F – Epitaxial Oxide Thin Films and Heterostructures , 1994 , 195
Copyright
Copyright © Materials Research Society 1994

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