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Synthesis of (SIC)3N4 Films by Ion Implantation

Published online by Cambridge University Press:  22 February 2011

C. Uslu ,
D. H. Lee ,
Y. Berta ,
B. Park ,
N. N. Thadhani  and
D. B. Poker
C. Uslu
Affiliation:
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332
D. H. Lee
Affiliation:
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332
Y. Berta
Affiliation:
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332
B. Park
Affiliation:
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332
N. N. Thadhani
Affiliation:
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332
D. B. Poker
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
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Abstract

We have investigated the synthesis of carbon-silicon-nitride compounds by ion implantation. In these experiments, 100 keV nitrogen ions were implanted into polycrystalline β-SiC (cubic phase) at various substrate temperatures and ion doses. These thin films were characterized in detail by x-ray diffraction with a position-sensitive detector, transmission electron microscopy with chemical analysis, and Rutherford backscattering spectroscopy. The as-implanted samples show a buried amorphous layer at a depth of 170 nm. The peak concentration of nitrogen saturates at approximately 45 at. % with doses above ~9.0×1017 N/cm2 at 860°C. These results suggest formation of a new phase by nitrogen implantation into β-SiC.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 765
Copyright
Copyright © Materials Research Society 1994

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References

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