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The Synthesis of III-V Semiconductor InSb Nanoparticles by Solvothermal Reduction Reactions

Published online by Cambridge University Press:  01 February 2011

Monica De Lezaeta ,
Margaret Lam ,
Shira Black ,
Baohe Chang  and
Bonnie Gersten
Monica De Lezaeta
Affiliation:
Department of Chemistry and Biochemistry, Queens College, CUNY, Flushing, NY 11367, U.S.A.
Margaret Lam
Affiliation:
Department of Chemistry and Biochemistry, Queens College, CUNY, Flushing, NY 11367, U.S.A.
Shira Black
Affiliation:
Department of Chemistry and Biochemistry, Queens College, CUNY, Flushing, NY 11367, U.S.A.
Baohe Chang
Affiliation:
Department of Chemistry and Biochemistry, Queens College, CUNY, Flushing, NY 11367, U.S.A.
Bonnie Gersten
Affiliation:
Department of Chemistry and Biochemistry, Queens College, CUNY, Flushing, NY 11367, U.S.A.
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Abstract

InSb has a large carrier mobility and a high sensitivity in the infrared wavelength range (3–5 μm), which makes it a good quantum dot material for infrared (IR) detectors. In this study, the synthesis of the nanocrystalline III-V semiconductor indium antimonide (InSb) by solvothermal reduction methods was investigated. InSb was synthesized by using indium (III) chloride and antimony (III) chloride as the starting materials and sodium borohydride as the reducing agent. Pure-phase InSb was successfully produced with diethylenetriamine and tetraethylenepentamine as the solvents and a Schlenk line apparatus as the reaction vessel. X-ray diffraction (XRD) was used to verify the successful production of InSb and transmission electron microscopy (TEM) was used to determine the particle size and shape of the product. In the future, growth kinetics of the particles will be investigated as they relate to their spectroscopic quantum confinement effects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 848: Symposium FF – Solid-State Chemistry of Inorganic Materials V , 2004 , FF3.34
Copyright
Copyright © Materials Research Society 2005

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References

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