Hostname: page-component-8448b6f56d-m8qmq Total loading time: 0 Render date: 2024-04-24T17:17:53.093Z Has data issue: false hasContentIssue false
  • English
  • Français

Synthesis of Cupric Oxide Films using Mass-Separated Low-Energy O+ Beams

Published online by Cambridge University Press:  25 February 2011

R. Kita ,
T. Hase ,
R. Itti ,
M. Sasaki  and
T. Morishita
R. Kita
Affiliation:
Superconductivity Research Laboratory, International Superconductivity Technology Center, 1-10-13, Shinonome, Koto-ku, Tokyo 135, Japan
T. Hase
Affiliation:
Superconductivity Research Laboratory, International Superconductivity Technology Center, 1-10-13, Shinonome, Koto-ku, Tokyo 135, Japan
R. Itti
Affiliation:
Superconductivity Research Laboratory, International Superconductivity Technology Center, 1-10-13, Shinonome, Koto-ku, Tokyo 135, Japan
M. Sasaki
Affiliation:
Superconductivity Research Laboratory, International Superconductivity Technology Center, 1-10-13, Shinonome, Koto-ku, Tokyo 135, Japan
T. Morishita
Affiliation:
Superconductivity Research Laboratory, International Superconductivity Technology Center, 1-10-13, Shinonome, Koto-ku, Tokyo 135, Japan
Get access

Abstract

We report the epitaxial growth of CuO thin films prepared by lowenergy and high-density O+ ion beams mass-separated from an oxygen plasma. We have successfully produced O+ beams of 50 μA/cm2 while maintaining an ambient pressure of 3×10−9 Torr during the growth. CuO grows on MgO(100) with epitaxial relationship of (111)CuO // (100)MgO and [110]CuO // [110]MgO at room temperature and even under conditions where the flux density of O+ beams is at least one order of magnitude lower than the minimum flux density of O2 required to form CuO.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 268: Symposium K – Materials Modification by Energetic Atoms and Ions , 1992 , 247
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Schlom, D.G., Marshall, A.F., Sizemore, J.T., Chen, Z.J., Eckstein, J.N., Bozovic, I., Von, K.E. Dessonneck, Harris, J.S. Jr and Bravman, J.C., J. Cryst. Growth 102, 361 (1990)Google Scholar
[2] Takagi, T., Proceedings Seventh Int. Conf. Ion Implantation. Tech. (North-Holland, Kyoto, 1988), p1.Google Scholar
[3] Shimizu, S., Tsukakoshi, O., Komiya, S. and Makita, Y., Jpn. J. Appl. Phys. 24, 1130 (1985).Google Scholar
[4] Freeman, J.H., Nucl. Inst. and Meth. 23, 306 (1963)Google Scholar