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Synthesis and Control of Nano-Scale CN Particles and its Distributions

Published online by Cambridge University Press:  01 February 2011

Peter x. Feng  and
Y. C. Shi
Peter x. Feng
Affiliation:
pfeng@cnnet.upr.edu, UPR-RP, Physics Department, PO Box 23343, San Juan, PR, 00931, Puerto Rico, 7877640000, 7877644063
Y. C. Shi
Affiliation:
sycium@dhu.edu.cn, Dong Hua University, Physics Department, Shanghai, Shanghai, 20051, China, People's Republic of
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Abstract

Micro-scale to nano-scale carbon nitride (CN) particles were prepared by using plasma sputtering deposition technique. The preferred orientation of nanoscale CN particle distributions was obtained. Particles have been examined by using both Scanning Electron Microscopy (SEM) and Raman scattering (RS) spectroscopy. Setting bias voltage up to 5 kV, plasma-sputtering deposition gave rise to several ring (diameters: 2.4, 3.2, and 4.4 mm) patterns of particle distributions where many small groups of nanoscale particles were observed. Each group of these particles appeared in a sunflower type of distribution, in which the biggest (85 nm) particle at the center was surrounded by many small sizes (30 nm) of CN particles. Disk type of the particles with a diameter of 10 μm was also observed at different experimental conditions. Typical G, D bands and C=N band in the Raman spectra of the samples were identified. The intensity of the D bands obviously varied at the different deposition conditions.

Keywords

sputteringplasma depositiontoughness
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 942: Symposium W – Colloidal Materials – Synthesis, Structure, and Applications , 2006 , 0942-W11-07
Copyright
Copyright © Materials Research Society 2006

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References

1 Liu, A. Y. and Cohen, M. L., Science, 245 (1989) 841, Phys. Rev. B, 41 (1990) 10727Google Scholar
2 Cohen, M. L., Science, 261 (1993) 307 Google Scholar
3 Li, Dong et al. , Appl. Phys. Lett. 68, (1996) 1211 Google Scholar
4 Chung, Yip-Wah, and Sproul, Willian D., MRS Bulletin, March 2003, P164Google Scholar
5 Yang, P., Feng, XP, Shi, YC, “Quick synthesis of carbon nitride films by new DC hollow cathode plasma sputtering deposition technique”, International Journal of modern physics B 19, (2005) 4437 Google Scholar
6 Feng, P.X., Yang, P. and Shi, Y.C., “Effect of Bias Voltages on the Synthesis of Nanostructured Carbon Nitride Film” Journal of Crystal Growth (accepted)Google Scholar
7 Bertran, E., Pino, F. J., Viera, G. and Andújar, J. L., acuum, 64, (2002) 181 Google Scholar
8 Fu, Yongqing, Loh, Nee Lam, Wei, Jun, Yan, Bibo and Hing, Peter, Wear, 237, (2000) 12 Google Scholar
9 Pereira, J., Geraud-Grenier, I., Massereau-Guilbaud, V., Thin Solid Film, 482, (2005) 226 Google Scholar
10 Sakamoto, Y., Takaya, M., Thin Solid Films, 475, (2005) 198 Google Scholar
11 Feng, P. X., “Preliminary Studies on Growth of Nanoscale Particles, Nanoscale Rods and n-CNx Films”, The first transdisciplinary research conference. San Juan, 10 Dec. 2004 Google Scholar
12 Li, DC, Yu, DL, and He, JL, Materials science and engineering A 350, (2003) 190 Google Scholar
13 Kato, K., Umehara, N., Adachi, K., Wear, 254, (2003) 1062 Google Scholar
14 Tu, K. N., Mayer, J. W., and Feldman, L. C., Electronic thin film sciences: (for electrical engineers & material scientists; Ke-Xue Pubulisher, Peking, China 1997, p116).Google Scholar
15 Lascovich, J.C., Giorgi, R., Scaglione, S., Appl. Surf. Sci. 47, (1991) 17 Google Scholar