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Synthesis and Characterization of A Metastable (SiC)aN4 Phase

Published online by Cambridge University Press:  21 February 2011

C. Uslu ,
B. Park  and
D. B. Poker
C. Uslu
Affiliation:
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332
B. Park
Affiliation:
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332
D. B. Poker
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
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Abstract

A metastable C-Si-N compound has been synthesized by high dose N+ implantation into polycrystalline /8-SiC (cubic phase). The thin films formed upon 100 keV implantations were characterized with respect to various ion doses and target temperatures. X-ray diffraction with a position-sensitive detector and cross-sectional transmission electron microscopy revealed that the as-implanted surfaces contained ∼0.15 jttm thick continuously-buried amorphous layers. Rutherford backscattering spectroscopy showed that the peak concentration of nitrogen saturated up to approximately 54 at. % with increasing doses, suggesting a new phase formation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 354: Symposium A – Beam Solid Interactions for Materials Synthesis and Characterization , 1994 , 195
Copyright
Copyright © Materials Research Society 1995

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References

1 Cohen, M. L., Science 261, 307 (1993); A. Y. Liu and M. L. Cohen, Science 245, 841 (1989); A. Y. Liu and M. L. Cohen, Phys. Rev. B. 41, 10727 (1990); M. L. Cohen, Phys. Rev. B. 32, 7988 (1985).Google Scholar
2 Chen, M. Y., Li, D., Lin, X., Dravid, V. P., Chung, Y. W., Wong, M. S., and Sproul, W. D., J. Vac. Sci. Technol. A 11, 521 (1993); M. Y. Chen, X. Lin, V. P. Dravid, Y. W. Chung, M. S. Wong, and W. D. Sproul, Surf, and Coat. Tech. 54/55, 360 (1992).Google Scholar
3 Yu, K. M., Cohen, M. L., Haller, E. E., Hansen, W. L., Liu, A. Y., and Wu, I. C., Phys. Rev. B 49, 5034 (1994); E. E. Haller, M. L. Cohen and W. L. Hansen, U. S. Patent No. 5,110,679, May 5, 1992.Google Scholar
4 Niu, C., Lu, Y. Z. and Lieber, C. M., Science 261, 334 (1993).Google Scholar
5 Maya, L., Cole, D. R. and Hagaman, E. W., J. Am. Ceram. Soc. 74, 1686 (1991); H. Han and B. J. Feldman, Solid State Comm. 65, 921 (1988).Google Scholar
6 Wixom, M. R., J. Am. Ceram. Soc. 73, 1973 (1990).Google Scholar
7 Fujimoto, F. and Ogata, K., Jpn. J. Appl. Phys. 32, 420 (1993).Google Scholar
8 Hoffman, A., Gouzman, I. and Brener, R., Appl. Phys. Lett. 64, 845 (1994).Google Scholar
9 Marton, D., Boyd, K. J., Al-Bayati, A. H., Todorov, S. S., and Rabalais, J. W., Phys. Rev. Lett. 73, 118 (1994); A. Bousetta, M. Lu, A. Bensaoula, and A. Schultz, Appl. Phys. Lett. 65, 696 (1994).Google Scholar
10 Badzian, A., Badzian, T. and Lee, S. T., Appl. Phys. Lett. 62, 3432 (1993).Google Scholar
11 Uslu, C., Lee, D. H., Berta, Y., Park, B., Thadhani, N. N., and Poker, D. B., Mat. Res. Soc. Symp. Proc. 316, 765 (1994).Google Scholar
12 Messier, D. R. and Croft, W. J., in Preparation and Properties of Solid State Materials, edited by Wilcox, W. R. (Dekker, New York, 1982), Vol. 7, p. 131.Google Scholar
13 RUMP, by Doolittle, L. and Thompson, M. O. (Cornell University, 1985).Google Scholar
14 Meekison, C. D., Booker, G. R., Reeson, K. J., Hemment, P. L. F., Peart, R. F., Chater, R. J., Kilner, J. A., and Davis, J. R., J. Appl. Phys. 69, 3503 (1991).Google Scholar