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Synchrotron X-Ray Topography as a Non-Destructive Monitor of Damage Accompanying IC Processing

Published online by Cambridge University Press:  28 February 2011

Michael Dudley ,
Franklyn F.Y. Wang ,
Thomas Fanning  and
David Gordon-Smith
Michael Dudley
Affiliation:
Dept. of Materials Science & Engineering, SUNY at Stony Brook, NY 11794
Franklyn F.Y. Wang
Affiliation:
Dept. of Materials Science & Engineering, SUNY at Stony Brook, NY 11794
Thomas Fanning
Affiliation:
Dept. of Materials Science & Engineering, SUNY at Stony Brook, NY 11794
David Gordon-Smith
Affiliation:
Dept. of Engineering, University of Warwick, Coventry CV4 7AL, UK
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Abstract

Synchrotron white beam x-ray topography in transmission geometry has been used to monitor the damage accompanying a Rapid Thermal Processing (RTP) treatment of Si wafers. The behavior of low and high carbon-content Si is contrasted and discussed. The applicability of this technique to this kind of study is demonstrated, with particular emphasis being laid on its non-destructive nature. The general usefulness of the technique as a monitor for damage accompanying IC processing is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 224: Symposium F – Rapid Thermal and Integrated Processing I , 1991 , 61
Copyright
Copyright © Materials Research Society 1991

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