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Swirl Defects in As-Grown Silicon Crystals

Published online by Cambridge University Press:  15 February 2011

A.J.R. de Kock
A.J.R. de Kock*
Affiliation:
Philips Research Laboratories, Eindhoven, The Netherlands
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Abstract

During melt-growth of macroscopically dislocation free bulk silicon crystals (floating-zone and Czochralski technique) microdefects can form due to the condensation of thermal point defects (self-interstitials, vacancies). The formation of these imperfections, generally referred to as “swirl defects”, is strongly affected by the growth conditions (e.g. the crystal pulling rate) and crystal purity. The various reported defect formation models will be discussed. Special attention will be paid to the effect of doping on swirl defect formation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 2: Symposium – Defects in Semiconductors I , 1980 , 309
Copyright
Copyright © Materials Research Society 1981

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References

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