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Surfactant-Mediated Si/Ge Epitaxial Crystal Growth

Published online by Cambridge University Press:  03 September 2012

Chan Wuk OH
Affiliation:
Department of Physics and Semiconductor Physics Research Center, Jeonbuk National University, Jeonju, 561-756, Korea
Young Hee Lee
Affiliation:
Department of Physics and Semiconductor Physics Research Center, Jeonbuk National University, Jeonju, 561-756, Korea
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Abstract

We investigate the kinetic role of a surfactant in the epitaxial Si/Ge crystal growth using ab initio molecular dynamics approach. We examine the previously suggested dimer-exchange mechanisms and find that kinetics plays a crucial role in determining the exchange process. We further find that the diffusion of adatoms on an island in the presence of a surfactant is quite different from the dimer-exchange process on a flat surface.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

1 Sakamoto, K. et al. , Jpn. J. Appl. Phys. 32, L204 (1993).Google Scholar
2 Copel, M. et al. , Phys. Rev. Lett. 63, 632 (1989).Google Scholar
3 Tromp, R. M. and Reuter, M. C., Phys. Rev. Lett. 68, 954 (1992).Google Scholar
4 Eaglesham, D. J. et al. , Phys. Rev. Lett. 70, 966 (1993).Google Scholar
5 Yu, B. D. and Oshiyama, A., Phys. Rev. Lett. 71, 585 (1993); 72, 3190 (1994).Google Scholar
6 Ohno, T., Phys. Rev. Lett. 73, 460 (1994).Google Scholar
7 Oh, C. W., Kim, E., and Lee, Y. H., Phys. Rev. Lett. 76, 776 (1996).Google Scholar
8 Car, R. and Parrinello, M., Phys. Rev. Lett. 55, 2471 (1985).Google Scholar
9 Kim, E., Oh, C. W., Kim, J. Y., and Lee, Y. H., unpublished.Google Scholar