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Surface Stabilities of n-type GaN Dependent on Electrolyte under Photoelectrochemical Reactions

Published online by Cambridge University Press:  13 February 2014

Kayo Koike ,
Akihiro Nakamura ,
Masakazu Sugiyama ,
Yoshiaki Nakano  and
Katsushi Fujii
Kayo Koike
Affiliation:
School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 JAPAN.
Akihiro Nakamura
Affiliation:
School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 JAPAN.
Masakazu Sugiyama
Affiliation:
School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 JAPAN.
Yoshiaki Nakano
Affiliation:
School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 JAPAN.
Katsushi Fujii
Affiliation:
Global Solar plus Initiative (GS+I), The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904 JAPAN.
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Abstract

The n-type GaN has stability problem of the surface anodic corrosion during the photoelectrochemical reaction for H2 generation. The photoelectrochemical surface stabilities of n-type GaN dependent on the electrolytes were investigated. The flatband potential in HCl obtained from Mott-Schottky plot shifted 0.1 V to positive direction compared with that in H2SO4. The variation of saturated photocurrent of 1 to 3 cycles in H2SO4 was much larger than that of HCl, NaOH and KOH. The surface morphologies also changed by the electrolytes. These results show the absorbed materials on the GaN electrode surface during the photoelectrochemical reactions were changed by the electrolyte and affected the surface reactions.

Keywords

adsorptionnitridecorrosion
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1647: Symposium GG – Surface/Interface Characterization and Renewable Energy , 2014 , mrsf13-1647-gg03-17
Copyright
Copyright © Materials Research Society 2014 

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References

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