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Surface Segregation and Composition Fluctuations in ammonia MBE and MOVPE of InGaN

Published online by Cambridge University Press:  17 March 2011

Sergey Yu. Karpov ,
Roman A. Talalaev ,
Eugene V. Yakovlev  and
Yuri N. Makarov
Sergey Yu. Karpov
Affiliation:
Soft Impact Ltd, P.O. Box 33, 194156, St.Petersburg, Russia
Roman A. Talalaev
Affiliation:
Soft Impact Ltd, P.O. Box 33, 194156, St.Petersburg, Russia
Eugene V. Yakovlev
Affiliation:
Soft Impact Ltd, P.O. Box 33, 194156, St.Petersburg, Russia
Yuri N. Makarov
Affiliation:
Fluid Mechanics Institute, University of Erlangen-Nürnberg, Cauerstraβe 4, 91058 Erlangen, Germany
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Abstract

Surface segregation and phase separation are investigated as processes limiting the indium incorporation in InGaN grown by ammonia Molecular Beam Epitaxy (MBE) and Metal- Organic Vapor Phase Epitaxy (MOVPE). It is shown that a significant concentration of indium on the growing surface may prevent the adsorption of ammonia via site blocking mechanism and result in appearance of In droplets instead of InGaN growth. Another conclusion is that the composition fluctuations in InGaN are related to coexistence of strained and relaxed InGaN islands rather than to the phase separation as commonly assumed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G3.18
Copyright
Copyright © Materials Research Society 2001

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References

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