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Surface Roughness and Specific Contact Resistance of AuGeNi/InP Ohmic Contacts

Published online by Cambridge University Press:  21 February 2011

Thomas Clausen  and
Otto Leistiko
Thomas Clausen
Affiliation:
Physics Department, Technical University of Denmark, Bldg. 309, DK-2800 Lyngby, Denmark.
Otto Leistiko
Affiliation:
Mikroelektronik Centret, Technical University of Denmark, Bldg. 345E, DK-2800 Lyngby, Denmark.
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Abstract

The surface roughness, ρ, of alloyed AuGeNi metallizations to n-type InP have been measured and compared to the specific contact resistance, rc. It was found that p was large for annealing temperatures above 370°C. Below 370°C the surface was smooth. The maximum value of p (120 nm) coincided with the minimum value of rc (7×10-8 Ωcm2) at 420°C annealing. In addition, outgrowths (∼2–4 μm in height), devastating for any further device processing, were observed for annealing temperatures between above 410°C. Using AES it was found that the outgrowths contained a large amount of Au, In and P with the original, as-deposited AuGeNi metallization lying on top. A two step annealing process was developed in order to overcome the outgrowth problem. In the first step the AuGeNi metallization was annealed for long times at a low temperature 370°C, which is the onset of low rc and large p. In the second step a short annealing at 500°C was employed to congruently melt the Au-In binary phase formed at 370°C. It was found that p remained in the order of 120 nm, but no outgrowths were observed and rc was further reduced to 5×10-8 Ωcm2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 355: Symposium B1 – Evolution of Thin-Film and Surface Structure and Morphology , 1994 , 389
Copyright
Copyright © Materials Research Society 1995

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References

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