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Surface Recombination Measurements in HgCdTe by Optical Modulation Frequency Response*

Published online by Cambridge University Press:  25 February 2011

J. A. Mroczkowski ,
E. Lesondak  and
D. Resler
J. A. Mroczkowski
Affiliation:
Honeywell Electro-Optics Division, Lexington, Massachusetts 02173
E. Lesondak
Affiliation:
Honeywell Electro-Optics Division, Lexington, Massachusetts 02173
D. Resler
Affiliation:
Honeywell Electro-Optics Division, Lexington, Massachusetts 02173
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Abstract

The frequency response in the modulation of the excess electron concentration, produced by a modulated photogenerating pump beam, is used to determine bulk life-time and the surface or interface recombination velocity. The depth-wise integrated excess electron concentration is contactlessly monitored by the proportional absorption/ transmission modulation of a second probe beam. Using this approach over the 20 kHz to 3 MHz frequency range recombination velocities up to 104 cm/sec have been measured in n-type epitaxial HgCdTe films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 90: Symposium R – Materials for Infrared Detectors and Sources , 1986 , 303
Copyright
Copyright © Materials Research Society 1987

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Footnotes

*

This work was supported under NVEOC contract DAAK-83-C-0184. The funding organization was AMMRC, Watertown, Massachusetts.

References

REFERENCES

Doyle, O.L., Mroczkowski, J.A. and Shanley, J.F., “Electron Lifetime Measurements in HgCdTe”, IRIS Specialty Group Meeting, Seattle, WA, August 1984.Google Scholar
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3. Mroczkowski, J.A., “Contractless Electron Lifetime Measurements in HgCdTe Epitaxial Films”, IRIS Specialty Group Meeting on Infrared Materials, SRI International, June 10, 11 (1986).Google Scholar
4. Mroczkowski, J.A., “HgCdTe Materials Screening Test Station”, U.S. Army CECOM Report No. DAAK70-83-C-0184, 1986.Google Scholar
5. Smith, R.A., Semiconductors, 1st ed. (Cambridge University Press, 1959), Chapter 8.Google Scholar