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A Surface Raman and Scanning Tunneling Microscopy Study of The Spatial Distribution of Corner-Sharing and Edge-Sharing Octahedra on thermally Oxidized Tungsten

Published online by Cambridge University Press:  10 February 2011

Matthew J. Côté ,
Corey Radloff ,
Joseph M. Osman ,
Rebecca Bussjager ,
R. Martin Villarica ,
Fazio Nash  and
J. Chaiken
Matthew J. Côté
Affiliation:
Department of Chemistry, Bates College, Lewiston, Maine 04240
Corey Radloff
Affiliation:
Department of Chemistry, Bates College, Lewiston, Maine 04240
Joseph M. Osman
Affiliation:
Rome Laboratory, Rome, New York 13441–4515
Rebecca Bussjager
Affiliation:
Rome Laboratory, Rome, New York 13441–4515
R. Martin Villarica
Affiliation:
Laser Chemical Corporation, 302 Edwards Dr., Fayetteville, New York 13066, jchaiken@syr.edu
Fazio Nash
Affiliation:
Department of Chemistry, Syracuse University, Syracuse, New York 13244–4100
J. Chaiken
Affiliation:
Department of Chemistry, Syracuse University, Syracuse, New York 13244–4100
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Abstract

We have measured the dependence of the strength of Raman activity of polycrystalline m-WO3 on spot size at constant laser power density. These data are compared to surface area scaling measurements obtained using scanning tunneling microscopy. We argue that the spatial distribution of scattering centers is the complement of the spatial distribution of crystallographic shear (CS) structures on or near the oxide surface. Our results are consistent with there being an essentially uniform spatial distribution of scattering sites which implies the spatial distribution of defect sites is also uniform. At the laser power density involved and at the defect densities studied, we found no evidence suggesting a large amount of cooperativity in the formation of CS structures. These results suggest a qualitative description of the structure of common oxide surfaces in agreement with a basic assumption of the JMAK theory of first order phase transformations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 495: Symposium W – Chemical Aspects of Electronic Ceramics Processing , 1997 , 413
Copyright
Copyright © Materials Research Society 1998

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References

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