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Surface Passivation and the Ultrafast Optical Response of Low-Temperature-Grown GaAs

Published online by Cambridge University Press:  26 February 2011

H. H. Wang ,
J. F. Whitaker ,
K. Al-Hemyari  and
S. L. Williamson
H. H. Wang
Affiliation:
Center for Ultrafast Optical Science, University of Michigan, Ann Arbor, MI 48109-2099
J. F. Whitaker
Affiliation:
Center for Ultrafast Optical Science, University of Michigan, Ann Arbor, MI 48109-2099
K. Al-Hemyari
Affiliation:
Picometrix, Inc., P.O. Box 130243, Ann Arbor, MI 48113-0243
S. L. Williamson
Affiliation:
Picometrix, Inc., P.O. Box 130243, Ann Arbor, MI 48113-0243
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Abstract

Metal-semiconductor-metal photodetectors fabricated using low-temperature-grown GaAs have been passivated using AlGaAs cap layers in order to understand the influence of surface states and fields on the properties of these detectors. It has been found that passivation has little effect on the time response or persistent photoconductive tails associated with the detectors, but that responsivity and dark current can be enhanced in certain circumstances. The dependence of the temporal response on optical fluence and dc-voltage bias were observed for both passivated and unpassivated detectors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 1001
Copyright
Copyright © Materials Research Society 1995

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