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Surface Interaction Between Wf6 and GaAs Under UV Laser Illumination

Published online by Cambridge University Press:  22 February 2011

M. Tabbal ,
R. Izquierdo ,
M. Meunier  and
A. Yelon
M. Tabbal
Affiliation:
Departement de Genie Physique et Groupes des Couches Minces, Ecole Polytechnique de Montreal, Montreal, Quebec, Canada, H3C 3A7.
R. Izquierdo
Affiliation:
Departement de Genie Physique et Groupes des Couches Minces, Ecole Polytechnique de Montreal, Montreal, Quebec, Canada, H3C 3A7.
M. Meunier
Affiliation:
Departement de Genie Physique et Groupes des Couches Minces, Ecole Polytechnique de Montreal, Montreal, Quebec, Canada, H3C 3A7.
A. Yelon
Affiliation:
Departement de Genie Physique et Groupes des Couches Minces, Ecole Polytechnique de Montreal, Montreal, Quebec, Canada, H3C 3A7.
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Abstract

We have studied laser-CVD of W on GaAs by X-ray Photoelectron Spectroscopy (XPS). Deposition of W is obtained by irradiating GaAs samples with a KrF excimer laser at normal incidence to the substrate, in a cell containing WF6 mixed with H2 and Ar. We have previously shown that WF6 and GaAs react at room temperature even without laser illumination. GaF3 formation and a loss of As were detected at the surface of the samples by XPS. At laser fluences of 50mJ/cm2, this reaction appears to be enhanced by laser heating of the substrate, but no metallic W is formed. At laser fluences of 67 mJ/cm2, metallic W begins to be deposited, through a pyrolytic dissociation reaction with the substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 191
Copyright
Copyright © Materials Research Society 1993

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References

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