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Surface Fluorination of Polyimide Thin Films by CF4 + O2 Reactive Ion Beam Etching

Published online by Cambridge University Press:  28 February 2011

William E. Vanderlinde  and
Arthur L. Ruoff
William E. Vanderlinde
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
Arthur L. Ruoff
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
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Abstract

Surface fluorination of polyimide thin films during CF4 + O2 reactive ion beam etching (RIBE) was investigated. The removal of the fluorinated layer by a subsequent oxygen ion beam etch was also studied. Electron spectroscopy for chemical analysis (ESCA) and Rutherford backscattering spectrometry (RBS) detected a fluorinated surface layer on the order of 100 A thick. Fluorine atom concentration in the surface of the film (as measured by RBS) and the etch rate of the film were measured as a function of several experimental parameters: ion energy, ion current density, etch time, and gas composition. The results are compared with theoretical predictions of the total number of fluorine atoms retained in the film after etching.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 75: Symposium B – Photon, Beam, and Plasma Stimulated Chemical Processes at Surfaces , 1986 , 517
Copyright
Copyright © Materials Research Society 1987

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