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Surface Engineering of Polycrystalline Silicon Microelectromechanical Systems for Fatigue Resistance

Published online by Cambridge University Press:  01 February 2011

C.L. Muhlstein ,
W.R. Ashurst ,
E.A. Stach ,
R. aboudian  and
R.O. Ritchie
C.L. Muhlstein
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, and Department of Materials Science and Engineering, University of California, Berkeley, CA 94720
W.R. Ashurst
Affiliation:
Department of Chemical Engineering, University of California, Berkeley, CA 94720
E.A. Stach
Affiliation:
National Center for Electron Microscopy, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
R. aboudian
Affiliation:
Department of Chemical Engineering, University of California, Berkeley, CA 94720
R.O. Ritchie
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, and Department of Materials Science and Engineering, University of California, Berkeley, CA 94720
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Abstract

Recent research has established that for silicon structural films used in microelectromechanical systems (MEMS), the susceptibility to premature failure under cyclic fatigue loading originates from a degradation process that is confined to the surface oxide. In ambient air environments, a sequential, stress-assisted oxidation and stress-corrosion cracking process can occur within the native oxide on polycrystalline silicon (referred to as reaction-layer fatigue); for the structural films of micron-scale dimensions, such incipient cracking in the oxide can lead to catastrophic failure of the entire silicon component. Since the degradation process is intimately linked to the thin reaction layer on the silicon, modification of this surface and the access of the environment to it can dramatically alter the fatigue resistance of the material. The purpose of this paper is to evaluate the efficacy of modifying the fatigue behavior of polycrystalline silicon with alkene-based monolayers. Specifically, 2-μm thick polysilicon fatigue structures were coated with a monolayer film based on 1-octadecene and cyclically tested to failure in laboratory air. By applying the coating, the formation of the native oxide was prevented. Compared to the fatigue behavior of untreated polysilicon, the lives of the coated samples ranged from 105 to >1010 cycles at stress amplitudes greater than ∼90% of the ultimate strength of the film. The dramatic improvement in fatigue resistance was attributed to the monolayer inhibiting the formation of the native oxide and stress corrosion of the surface. It is concluded that the surprising susceptibility of thin structural silicon films to premature fatigue failure can be inhibited by such monolayer coatings.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 729: Symposium U – MEMS and BioMEMS , 2002 , U2.1
Copyright
Copyright © Materials Research Society 2002

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References

1. Connally, J.A. and Brown, S.B., Science, 256, 1537–39 (1992).Google Scholar
2. Kahn, H., Ballarini, R., Mullen, R.L. and Heuer, A.H., Proc. Roy. Soc. A, 455, 3807–23 (1999).Google Scholar
3. Kapels, H., Aigner, R. and Binder, J., in Proceedings of the 29th European Solid-State Device Research Conference, edited, IEEE, 1999, pp. 1522–28.Google Scholar
4. Bagdahn, J. and Sharpe, W.N.J., in MEMS 2002, edited, IEEE, 2002, pp. 447–450.Google Scholar
5. Muhlstein, C.L., Brown, S.B. and Ritchie, R.O., Sens. Actuators A, 94, 177–88 (2001).Google Scholar
6. Muhlstein, C.L., Stach, E.A. and Ritchie, R.O., Appl. Phys. Let., 80, 1532–1534 (2002).Google Scholar
7. Muhlstein, C.L., Stach, E.A. and Ritchie, R.O., Acta Mater., in press (2002).Google Scholar
8.MCNC/Cronos, www.memsrus.com, 2000.Google Scholar
9. Simmons, G. and Wang, H., Single Crystal Elastic Constants and Calculated Aggregate Properties: a Handbook, 2nd ed., edited by, Press, M.I.T., Cambridge, MA, 1971.Google Scholar
10. Ballarini, R., Mullen, R.L., Yin, Y., Kahn, H., Stemmer, S. and Heuer, A.H., Adv. Appl. Mech., 12, 915–22 (1997).Google Scholar
11. Kahn, H., Tayebi, N., Ballarini, R., Mullen, R.L. and Heuer, A.H., Sens. Actuators A, A82, 274–80 (2000).Google Scholar
12. Muhlstein, C.L., Brown, S.B. and Ritchie, R.O., J. Microelectromech. Sys., 10, 593–600 (2001).Google Scholar
13. Ashurst, W.R., Yau, C., Carraro, C., Howe, R.T. and Maboudian, R., in Hilton Head Solid-State Sensor and Actuator Workshop, edited, Transducers Res. Found, 2000, pp. 320–23.Google Scholar
14. Muhlstein, C.L., Howe, R.T. and Ritchie, R.O., Mech. Mater., in review (2002).Google Scholar
15. Ashurst, W.R., Yau, C., Carraro, C., Maboudian, R. and Dugger, M.T., J. Microelectromech. Sys., 10, 41–49 (2001).Google Scholar