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Surface Electronic Properties of Ionimplanted Laser-Annealed Si(111)

Published online by Cambridge University Press:  15 February 2011

D.E. Eastman ,
P. Heimann ,
F.J. Himpsel ,
B. Reihl ,
D.M. Zehner  and
C.W. White
D.E. Eastman
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598, USA
P. Heimann
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598, USA
F.J. Himpsel
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598, USA
B. Reihl
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598, USA
D.M. Zehner
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37830, USA
C.W. White
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37830, USA
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Abstract

Highly-degenerate As-doped n-type and B-doped p-type Si(l11)−(1×1) surfaces have been prepared via ion implantation and laser annealing and studied using photoemission. For As concentrations of ∼4–7%, surface states become very different from those for intrinsic Si(l11)−(1×1) and the Fermi level EF at the surface moves to the conduction band minima resulting in a zero height n-type Schottky barrier. Emission from the conduction band minima has been directly viewed in momentum space.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 261
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

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