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Surface Damage Introduced by Diamond Wire Sawing of Si Wafers: Measuring in-depth and the Lateral Distributions for Different Cutting Parameters

Published online by Cambridge University Press:  08 October 2015

Bhushan Sopori ,
Srinivas Devayajanam ,
Prakash Basnyat ,
Rekha Schnepf ,
Santosh Sahoo ,
James Gee ,
Ferdinando Severico ,
Hubert Seigneur ,
Winston V. Schoenfeld  and
Steve Preece
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Bhushan Sopori
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401, USA
Srinivas Devayajanam
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401, USA New Jersey Institute of Technology, Newark, NJ 07102, USA
Prakash Basnyat
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401, USA New Jersey Institute of Technology, Newark, NJ 07102, USA
Rekha Schnepf
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401, USA
Santosh Sahoo
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401, USA New Jersey Institute of Technology, Newark, NJ 07102, USA
James Gee
Affiliation:
Applied Materials, Santa Clara, CA 95054, USA
Ferdinando Severico
Affiliation:
Applied Materials, Santa Clara, CA 95054, USA
Hubert Seigneur
Affiliation:
PVMC, Orlando, FL 32826, USA
Winston V. Schoenfeld
Affiliation:
PVMC, Orlando, FL 32826, USA
Steve Preece
Affiliation:
PVMC, Orlando, FL 32826, USA
Jeff Binns
Affiliation:
SunEdison, Portland, OR 97216, USA
Jesse Appel
Affiliation:
SunEdison, St Peters, MO 63376, USA
Kaitlyn VanSant
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401, USA
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Abstract

This paper describes the characteristics of damage, introduced under different conditions of diamond wire sawing, on the Si wafer surfaces. The damage occurs in the form of frozen-in dislocations, phase changes, and microcracks. The in-depth damage was determined by conventional ways such as TEM, SEM and angle-polishing/defect-etching, which only provide local information. We have also applied a new technique based on sequential measurement of the minority carrier lifetime after etching thin layers from the surfaces to determine average damage depth and its in-depth distribution. The lateral spatial damage variations, which seem to be mainly related to wire reciprocation process, were observed by photoluminescence and lifetime mapping. Our results show a strong correlation of damage depth on the diamond grit size and wire usage.

Keywords

dislocationsphotovoltaicfracture
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1770: Symposium A – Emerging Silicon Science and Technology , 2015 , pp. 61 - 66
Copyright
Copyright © Materials Research Society 2015 

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References

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