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Surface Chemical Routes to Low Contamination Beam Assisted GaAs Etching

Published online by Cambridge University Press:  25 February 2011

Duncan Marshall  and
Richard B. Jackman
Duncan Marshall
Affiliation:
Electronic Electrical Engineering, University College London, Torrington Place, WC1E 7JE
Richard B. Jackman
Affiliation:
Electronic Electrical Engineering, University College London, Torrington Place, WC1E 7JE
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Abstract

In-situ processing requires totally dry approaches to pattern generation to be developed. Of particular interest are beam driven reactions that can be localised without prior masking. This paper considers the adsorption - desorption characteristics of chlorine, dichloroethane and sulphuryl chloride on GaAs(lOO). The surface reactivity in these systems is seen to vary considerably. The implications of this are considered with regard to their use as chemically assisted ion beam and laser photochemical etching gases.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 587
Copyright
Copyright © Materials Research Society 1993

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References

1. Aoyagi, Y, Shinmura, K, Kawasaki, K, Tanaka, T, Gamo, K, Namba, S and Nakamoto, I Appl Phys. Letts., 60 (1992), 968 CrossRefGoogle Scholar
2. Harriott, LR, Mat. Sci. Eng. B (Sol. State Mat. Adv. Tech.), B14 (1992) 336 Google Scholar
3. Kosugi, T, Yamashiro, T, Aihara, R, Gamo, k and Namba, S J. Vac. Sci. Tech., B9 (1991), 3099 CrossRefGoogle Scholar
4. “Photochemical Processing of Electronic Materials” Eds. Boyd, IW and Jackman, RB (Academic Press, London 1992)Google Scholar
5. Kosugi, T, Nimura, R, Aihura, R, Gamo, K. and Namba, S Jap. J. Appl Phys., 29 (1990), 2295 Google Scholar
6. Balooch, M, Olander, DR and Siekhaus, WJ J. Vac. Sci. Technol., B4 (4) 794 (1986)Google Scholar
7. McNevin, SC and Becker, GE J. Appl Phys., 58 (1985), 4670 Google Scholar
8. Tyrrell, GC, Marshall, D, Beekman, J and Jackman, RB J. Phys. (Condens. Mat), 3 (1991), S179.Google Scholar
9. Marshall, D and Jackman, RB, MRS Symp. Proc, 268, (1992) 23–28 Google Scholar
10. Stevenson, R, Chem. Brit., 26(1990), 731 Google Scholar
11. Handbook, CRC of Chemistry and Physics, 69th Edn.Google Scholar
12. Greenwood, NN and Earnshaw, A, Chemistry of the Elements, (Pergamon Press, Oxford 1984)Google Scholar