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Surface Characterization of GaN Formation on GaAs(100) Using Ammonia

Published online by Cambridge University Press:  10 February 2011

Chul Huh ,
Sook Ahn ,
Jeong Yeul Han ,
Keum Jae Cho ,
Jae Myung Seo  and
Seong-Ju Park
Chul Huh
Affiliation:
Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, Kwangju 506-712, Korea
Sook Ahn
Affiliation:
Department of Physics, Jeonbuk National University, Jeonju 561-756, Korea
Jeong Yeul Han
Affiliation:
Department of Physics, Jeonbuk National University, Jeonju 561-756, Korea
Keum Jae Cho
Affiliation:
Department of Physics, Jeonbuk National University, Jeonju 561-756, Korea
Jae Myung Seo
Affiliation:
Department of Physics, Jeonbuk National University, Jeonju 561-756, Korea
Seong-Ju Park
Affiliation:
Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, Kwangju 506-712, Korea
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Abstract

The GaN formation on GaAs(100) using NH3 has been investigated using synchrotron radiation photoemission spectroscopy and an atomic force microscope (AFM). This study showed the effect of nitridation temperature on the compositional change, the chemical states, and the surface morphological changes in the nitridated surface layer. It was observed that ammonia is decomposed to an activated nitrogen atom above 700°C forming GaN on the surface. A thermally nitridated layer was composed of metallic Ga and GaN islands elongated along the [011] direction to relax the tensile strain in the [011] direction. As the nitridation temperature increased, the composition of GaN increased in the nitridated layer due to the efficient thermal decomposition of NH3 and the subsequent incorporation of the N atom to the metallic Ga. The surface morphology of the nitridated layer was also sensitive to the nitridation temperature and a smooth surface morphology could be obtained on the surface nitridated at 700°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 63
Copyright
Copyright © Materials Research Society 1998

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