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Surface and Near-Surface Atom Dynamics During Low Energy Xe Ion Bombardment of Si and Fcc Surfaces

Published online by Cambridge University Press:  16 February 2011

M. V. R. Murty ,
H. S. Lee  and
Harry A. Atwater
M. V. R. Murty
Affiliation:
Thomas J. Watson Laboratory of Applied Physics California Institute of Technology, Pasadena, CA 91125
H. S. Lee
Affiliation:
Thomas J. Watson Laboratory of Applied Physics California Institute of Technology, Pasadena, CA 91125
Harry A. Atwater
Affiliation:
Thomas J. Watson Laboratory of Applied Physics California Institute of Technology, Pasadena, CA 91125
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Abstract

Surface and near-surface processes have been studied during low energy Xe ion bombardment of Si (001) and fcc surfaces using molecular dynamics simulations. Defect production is enhanced near the surface of smooth Si (001) surfaces with respect to the bulk in the energy range 20–150 eV, but is not confined exclusively to the surface layer. The extent and qualitative nature of bombardment-induced dissociation of small fcc islands on an otherwise smooth fcc (001) surface is found to depend strongly on island cohesive energy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 193: Symposium Q – Atomic Scale Calculations of Structure in Materials , 1990 , 301
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

[1] Hasan, M-A., Knall, J., Barnett, S.A., Rockett, A., Sundgren, J-E., and Greene, J.E., J. Vac. Sci. Tech, B5, 1332 (1987).Google Scholar
[2] Greene, J.E., CRC Critical Reviews in Solid State and Materials Science, 2, 47 (1983).Google Scholar
[3] Zuhr, R.A., Pennycook, S.J., Noggle, T.S., Herbots, N., Haynes, T.E., and Appleton, B.R., Nucl. Instr. and Meth. B, 37/38, 16 (1989).Google Scholar
[4] Tsao, J.Y., Chason, E., Horn, K.M., Brice, D.K. and Picraux, S.T., Nucl. Instr. and Meth. B, 39, 72 (1989).Google Scholar
[5] Tsai, C.J., Vreeland, T. and Atwater, H.A., submitted to Applied Physics Letters.Google Scholar
[6] Choi, C.H. and Barnett, S.A., Appl. Phys. Lett., 55, 2319 (1989).Google Scholar
[7] Garrison, B.J., Miller, M.T., and Brenner, D.W., Chem. Phys. Lett., 146, 553 (1988).Google Scholar
[8] Dodson, B., Phys. Rev. 36, 1068 (1987); B. Dodson, J. Vac. Sci. Technol. B5, 1393 (1987).Google Scholar
[9] Sputtering by Particle Bombardment I, Physical Sputtering of Single Element Solids, Behrisch, R., ed., Springer-Verlag, Berlin, 1981.Google Scholar
[10] The Stopping and Range of Ions in Solids, Ziegler, J.F., Biersack, J.P. and Littmark, U., Pergamon Press, New York, 1986.Google Scholar
[11] Smith, R., Harrison, D.E. and Garrison, B.J., Phys. Rev. B., 40, 40 (1989).Google Scholar
[12] Brice, D.K., Tsao, J.Y., and Picraux, S.T., Nucl. Instr. and Meth. B., 44, 68 (1989).Google Scholar
[13] Tersoff, J., Phys. Rev. B., 38, 38 (1988).Google Scholar
[14] Beeler, J.R., “Atomistic Model Computer Experiments”, Computer Simulation in Materials Science. ASM International, Metals Park, Ohio, 1988, pp. 45–78.Google Scholar