Hostname: page-component-76fb5796d-x4r87 Total loading time: 0 Render date: 2024-04-28T08:04:04.436Z Has data issue: false hasContentIssue false

Superlattice Thin-film Thermoelectric Materials and Devices

Published online by Cambridge University Press:  01 February 2011

Rama Venkatasubramanian
Affiliation:
Research Triangle Institute, Research Triangle Park, NC 27709, USA
Brooks O'Quinn
Affiliation:
Research Triangle Institute, Research Triangle Park, NC 27709, USA
Edward Siivola
Affiliation:
Research Triangle Institute, Research Triangle Park, NC 27709, USA
Kip Coonley
Affiliation:
Research Triangle Institute, Research Triangle Park, NC 27709, USA
Pratima Addepally
Affiliation:
Research Triangle Institute, Research Triangle Park, NC 27709, USA
Mary Napier
Affiliation:
Research Triangle Institute, Research Triangle Park, NC 27709, USA
Thomas Colpitts
Affiliation:
Research Triangle Institute, Research Triangle Park, NC 27709, USA
Get access

Abstract

Thin-film nano-structured materials offer the potential to enhance the performance of thermoelectrics, with near-term capabilities like small-footprint coolers for lasers and microprocessors. Our recent focus has been to transition the enhanced figure-of-merit (ZT) in p-type Bi2Te3/Sb2Te3 and n-type Bi2Te3/Bi2Te3-xSex superlattices to performance at the module level with several device demonstrations. We have been able to obtain a best ZT of ∼2 in a p-n couple, the fundamental cooling or power conversion unit in an operational module. In addition, we have been able to demonstrate p-n couple ZT of as much as 1.6 from heat-to-power efficiency data. The thermal interface resistances between the active device and the external heat source have been optimized. A power level of 38 mW per couple for a ΔT of about 107K, with 4-micron-thick element, was obtained. This translates to an active power density of ∼54 W/cm2 and a mini-module power density of ∼10.5 W/cm2. In short, power devices with thin-film superlattices are a real possibility. In the cooling arena, we have been able to obtain over 50K active cooling with thin-film modules, useable in several laser and microprocessor cooling needs. This is in spite of severe thermal management issues that had to be overcome noting that the “true” hot-side temperature, and hence the “true” ΔT, across the device are much higher. Even so, we have p-n superlattice couples that show twice the cooling ΔTmax, compared to the best bulk p-n couples at cryogenic temperatures. Some of the challenges that remain to be addressed in the full development of this materials technology and thoughts on further progress in nano-structured materials are presented.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Venkatasubramanian, R.; Siivola, E.; Colpitts, T.; O'Quinn, B. Thin-film thermoelectric devices with high room-temperature figures of merit. Nature 2001, 413, 597602.Google Scholar
2. Venkatasubramanian, R. Lattice thermal conductivity reduction and phonon localization-like behavior in superlattice structures. Phys. Rev. B 2000, 61, 30913097.Google Scholar
3. Venkatasubramanian, R.; Siivola, E.; Colpitts, T. S. Proc. of 17th International Conference on Thermoelectrics, IEEE Catalog No. 98TH8365, 1998, p 191.Google Scholar
4. Harman, T.; Taylor, P. J.; Walsh, M. P.; LaForge, B. E. Quantum dot superlattice thermoelectric materials and devices. Science 2002, 297, 22292232.Google Scholar
5. Beyer, H.; Nurnus, J.; Bottner, H.; Lambrecht, A.; Wagner, E.; Bauer, G. High thermoelectric figure of merit ZT in PbTe and Bi2Te3-based superlattices by a reduction of the thermal conductivity. Physica E, 2002, 13, 965968.Google Scholar
6. Venkatasubramanian, R.; Timmons, M. L.; Hutchby, J. A.; Borrego, J. Proc. of 1st National Thermogenic Cooler Workshop; Horn, S., Ed.; Fort Belvoir, VA, 1992, pp 196231.Google Scholar
7. Venkatasubramanian, R.; Timmons, M. L.; Hutchby, J. A. Proc. of 12th International Conference on Thermoelectrics, Yokohama, , Matsuura, K., Ed.; 1993, p 322.Google Scholar
8. Lee, S. M.; Cahill, D. G.; Venkatasubramanian, R. Thermal conductivity of Si-Ge superlattices. Appl. Phys. Lett. 1997, 70, 29572959.Google Scholar
9. Chen, G., Proc. of ICT 2003, Nancy, France, to be published.Google Scholar
10. Vining, C., Nature 2001, 413, 557558.Google Scholar
11. Venkatasubramanian, R.; Colpitts, T.; O'Quinn, B.; Liu, S.; El-Masry, N.; Lamvik, M. Low-temperature organometallic epitaxy and its application to superlattice structures in thermoelectrics. Appl. Phys. Lett. 1999, 75, 11041106.Google Scholar
12. Venkatasubramanian, R. Low temperature chemical vapor deposition and etching apparatus and method. U.S. Patent no. 6,071,351 (6 June 2000).Google Scholar
13. Venkatasubramanian, R.; Siivola, E.; Colpitts, T.; O'Quinn, B. Phonon-blocking, electron-transmitting low-dimensional structures. U.S. Patent Application No. 20,030,099,279; www.uspto.gov.Google Scholar
14. Goldsmid, H. J. Electronic Refrigeration, Pion Ltd., 1983.Google Scholar
15. Venkatasubramanian, R.; Siivola, E.; O'Quinn, B. C.; Coonley, K.; Addepalli, P.; Colpitts, T.; to be published.Google Scholar
16. Bannerjee, K.; Mahajan, R. www.intel.com/showcase/silicon Google Scholar
17. Hicks, L.D. and Dresselhaus, M.S., Phys. Rev. B47, 12727 (1993).Google Scholar