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Sulfur Passivation of InP and GaAs

Published online by Cambridge University Press:  22 February 2011

A. Kapila ,
X. Si  and
V. Malhotra
A. Kapila
Affiliation:
Optoelectronics Research Laboratory, Department of Electrical Engineering, University of Hawaii at Manoa, 2540 Dole Street, Honolulu, HI 96822
X. Si
Affiliation:
Optoelectronics Research Laboratory, Department of Electrical Engineering, University of Hawaii at Manoa, 2540 Dole Street, Honolulu, HI 96822
V. Malhotra
Affiliation:
Optoelectronics Research Laboratory, Department of Electrical Engineering, University of Hawaii at Manoa, 2540 Dole Street, Honolulu, HI 96822
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Abstract

Passivation of electronic defect states at the SiNx/InP and the SiNx/GaAs interfaces has been achieved using both ‘wet’ (ammonium and phosphorous polysulfide solutions) and ‘dry’ (H2S gas) sulfur treatments. The passivated surfaces are encapsulated by depositing SiNx overlayers at ∼ 200 °C using the electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD) technique. The capacitance-voltage (C-V) characteristics of metal-insulatorsemiconductor (MIS) capacitors indicate substantial reduction in the density of interface defects. Schottky diodes, fabricated in sulfur-treated n-GaAs, also exhibit significant improvements. The H2S-treatment provides better reproducibility and uniformity when compared with the ‘wet’ sulfide treatment of the surfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 300: Symposium D1 – III-V Electronic and Photonic Device Fabrication and Performance , 1993 , 441
Copyright
Copyright © Materials Research Society 1993

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References

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