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Substrate-Surface Effect on Initial Growth Process of Microcrystalline Silicon Films

Published online by Cambridge University Press:  15 February 2011

K. Ikuta ,
J. W. Park ,
L. H. Kuo ,
T. Yasuda ,
S. Yamasaki  and
K. Tanaka
K. Ikuta
Affiliation:
Joint Research Center for Atom Technology (JRCAT) - National Institute for Advanced, Interdisciplinary Research (NAIR), 1–1–4, Higashi, Tsukuba, Ibaraki 305, Japan
J. W. Park
Affiliation:
Joint Research Center for Atom Technology (JRCAT) - Angstrom Technology Partnership (ATP), 1–1–4, Higashi, Tsukuba, Tsukuba, Ibaraki 305, Japan
L. H. Kuo
Affiliation:
Joint Research Center for Atom Technology (JRCAT) - Angstrom Technology Partnership (ATP), 1–1–4, Higashi, Tsukuba, Tsukuba, Ibaraki 305, Japan
T. Yasuda
Affiliation:
Joint Research Center for Atom Technology (JRCAT) - National Institute for Advanced, Interdisciplinary Research (NAIR), 1–1–4, Higashi, Tsukuba, Ibaraki 305, Japan
S. Yamasaki
Affiliation:
Joint Research Center for Atom Technology (JRCAT) - National Institute for Advanced, Interdisciplinary Research (NAIR), 1–1–4, Higashi, Tsukuba, Ibaraki 305, Japan
K. Tanaka
Affiliation:
Joint Research Center for Atom Technology (JRCAT) - National Institute for Advanced, Interdisciplinary Research (NAIR), 1–1–4, Higashi, Tsukuba, Ibaraki 305, Japan
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Abstract

Initial growth processes of hydrogenated microcrystalline silicon (μc-Si:H) films have been investigated by scanning tunneling microscopy (STM), high-resolution transmission electron microscopy (HRTEM), and reflection high energy electron diffraction (RHEED). The μc-Si:H films were prepared by plasma enhanced chemical vapor deposition (PECVD) on H-terminated Si(111) and plasma-oxidized SiO2/Si(111) surfaces that were made atomically-flat by a careful wet processing. On H-terminated Si(111) the initial growth was epitaxial as evidenced by HRTEM and RHEED, while on SiO2/Si(111) the initial process was nucleation of amorphous Si followed by formation of randomly oriented μc-Si:H structure. STM observation revealed that, on both H-terminated and SiO2-terminated surfaces, initial growth processes proceed through the nucleation-and-coalescence mechanism.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 743
Copyright
Copyright © Materials Research Society 1997

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References

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