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Substitutional and Interstitial Doping of Amorphous Silicon Nitride

Published online by Cambridge University Press:  26 February 2011

W. E. Spear ,
B. Dunnett  and
P. G. Lecomber
W. E. Spear
Affiliation:
Carnegie Laboratory of Physics, University of Dundee, Dundee, Scotland, U.K.
B. Dunnett
Affiliation:
Carnegie Laboratory of Physics, University of Dundee, Dundee, Scotland, U.K.
P. G. Lecomber
Affiliation:
Carnegie Laboratory of Physics, University of Dundee, Dundee, Scotland, U.K.
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Abstract

Doped films of amorphous silicon nitride have been prepared by the glow discharge technique over a wide range of ammonia/silane mixtures. P- and B-doped specimens were produced by admixing phosphine or diborane during deposition. Interstitial doping was attempted by Na-ion implantation, and by in-diffusion of evaporated Li. For values of the ammonia/silane volume ratio R < 10−2, the optical gap remains unchanged and all the above dopants raise the room temperature conductivity to σRT ≅ 10−2(Ω cm)−1. With increasing R the efficiency of P, B and Na doping decreases rapidly. However, incorporation of Li continues to significantly increase σRT at higher R where the optical gap approaches 5eV. Near-stoichiometric, transparent specimens have been prepared with σRT increased by up to 14 orders of magnitude by Li doping. A discussion of the doping results is given.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 39
Copyright
Copyright © Materials Research Society 1987

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