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Study on the effect of Silicon surface cleaning processes on Gate Oxide Integrity

Published online by Cambridge University Press:  10 February 2011

A. Corradi ,
E. Borzoni ,
P. Godio  and
G. Borionetti
A. Corradi
Affiliation:
MEMC Electronic Materials SpA, Viale Gherzi, 31 28100 Novara Italy
E. Borzoni
Affiliation:
MEMC Electronic Materials SpA, Viale Gherzi, 31 28100 Novara Italy
P. Godio
Affiliation:
MEMC Electronic Materials SpA, Viale Gherzi, 31 28100 Novara Italy
G. Borionetti
Affiliation:
MEMC Electronic Materials SpA, Viale Gherzi, 31 28100 Novara Italy
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Abstract

The effect of different silicon wafer surface preparation in modulating gate oxide quality performance has been studied through an experimental design which examines key phases of wafer cleaning and polishing processes. An interpretation of the root causes of GOI degradation has been proposed and discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 477 , 1997 , 241
Copyright
Copyright © Materials Research Society 1997

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References

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