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Study on Deep Level Traps in P-Hgcdte With Dltfs

Published online by Cambridge University Press:  10 February 2011

S. Kawata ,
I. Sugiyama ,
N. Kajihara  and
Y. Miyamoto
S. Kawata
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, 243-0124, JAPAN. skawata@flab.fujitsu.co.jp
I. Sugiyama
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, 243-0124, JAPAN. skawata@flab.fujitsu.co.jp
N. Kajihara
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, 243-0124, JAPAN. skawata@flab.fujitsu.co.jp
Y. Miyamoto
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, 243-0124, JAPAN. skawata@flab.fujitsu.co.jp
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Abstract

We studied the characteristics of deep-level traps in p-type HgCdTe diodes using the Deep Level Transient Fourier Spectroscopy (DLTFS) method. For both holes and electrons, two types of traps were observed. The DLTFS signal intensity of one type of trap increased with the carrier density in the HgCdTe, while the other did not exhibit a monotonic increase. While measuring the stability of these traps during cooling cycles, the DLTFS signal intensity of the first group was almost constant while that of the latter fluctuated with every cooling cycle. Stable traps originated from Hg vacancies, unstable traps are attributed to vacancy-impurity complex defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 487: Symposium I – Semiconductors for Room-Temperature Radiation II , 1997 , 625
Copyright
Copyright © Materials Research Society 1998

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