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Study on Cu Cleaning Efficacy Depending on Initial Contamination Method

Published online by Cambridge University Press:  10 February 2011

J. S. Kim ,
H. Morita ,
J. D. Joo  and
T. Ohmi
J. S. Kim
Affiliation:
Department of Electronics, Faculty of Engineering, Tohoku University, Sendai 980, Japan, kim@sse.ecei.tohoku.ac.jp
H. Morita
Affiliation:
Department of Electronics, Faculty of Engineering, Tohoku University, Sendai 980, Japan, kim@sse.ecei.tohoku.ac.jp
J. D. Joo
Affiliation:
Department of Electronics, Faculty of Engineering, Tohoku University, Sendai 980, Japan, kim@sse.ecei.tohoku.ac.jp
T. Ohmi
Affiliation:
Department of Electronics, Faculty of Engineering, Tohoku University, Sendai 980, Japan, kim@sse.ecei.tohoku.ac.jp
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Abstract

We investigated a dependence of cleaning efficiency for Cu on the initial contamination method with different initial concentration and contamination solution. Through this study, we found that the cleaning efficiency of typical dissoluble chemical solutions such as O3-UPW, SPM and HPM for Cu contaminated in diluted-hydrofluoric acid (DHF) was better than for that in ultrapure water (UPW). And, it is shown that there is a dependence of cleaning efficiency for Cu contaminated in UPW. The different desorption behaviors of Cu contaminated in UPW and DHF can be interpreted by the fact that the Cu is included in metal-induced-oxide (MIO) grown during contamination in UPW and can not be removed by only dissolution process of O3-UPW, SPM and HPM solutions which have no etching effect on SiO2 and Si. In contrast, a relatively low concentration Cu contaminated in DHF which has no MIO effect can be removed below the detection limit by only dissolution process of these chemical solutions. However, Cu contaminated in DHF is dissolved and inserted in the chemical oxide grown during cleaning process as the initial Cu concentration is a relatively high. Consequently, we conclude that Cu on Si surface can be fundamentally removed by just dissolution process of typical dissoluble chemicals except the amount of Cu inserted in MIO grown during contamination in UPW and chemical oxide grown in chemical solutions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 477 , 1997 , 259
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

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